Infineon Technologies AG CoolSiC™ Schottky Diodes IDM02G120C5

Description
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes 1 2
Request a Quote Datasheet
Description
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDM02G120C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDM02G120C5
CoolSiC™ Schottky Diodes IDM02G120C5
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes FF450R12KE4 | IGBT modules IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF200R12KE4 | IGBT modules BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IMBG120R040M2H | Silicon Carbide MOSFET Discretes 1 2

1200 V Silicion Carbide Schottky diode in a DPAK real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.


Summary of Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temperature dependency of VF
  • Best-in-class surge current capability
  • Excellent thermal performance

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Applications

  • General purpose motor drive - variating frequency and voltage
  • Motor Control
  • Photovoltaic
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IMBG120R040M2H |
    Silicon Carbide MOSFET Discretes
  • FF450R12KE4 |
    IGBT modules
  • IPB60R180C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • FF200R12KE4 |
    IGBT modules
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IRLML9301 |
    P-Channel Power MOSFET
  • IMBG120R040M2H |
    Silicon Carbide MOSFET Discretes
  • FF450R12KE4 |
    IGBT modules
  • IPB60R180C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • FF200R12KE4 |
    IGBT modules
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IRLML9301 |
    P-Channel Power MOSFET
  • IMBG120R040M2H |
    Silicon Carbide MOSFET Discretes

1
2

Supplier's Site Datasheet
Diodes, Rectifiers - Single - IDM02G120C5 - 1183868-IDM02G120C5 - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Single - IDM02G120C5
1183868-IDM02G120C5
Diodes, Rectifiers - Single - IDM02G120C5 1183868-IDM02G120C5
Manufacturer: Infineon Technologies Win Source Part Number: 1183868-IDM02G120C5 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1183868-IDM02G120C5
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now
Schottky Diode and Rectifier - 280-IDM02G120C5 - ERSAELECTRONICS PTE. LTD.
Singapore
Schottky Diode and Rectifier
280-IDM02G120C5
Schottky Diode and Rectifier 280-IDM02G120C5
Silicon Carbide Schottky Diode Product overview: IDM02G120C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDM02G120C5 can be used for catalog matching and distributor lookup.

Silicon Carbide Schottky Diode Product overview: IDM02G120C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDM02G120C5 can be used for catalog matching and distributor lookup.

Supplier's Site
1.2kV 1.65V@2A 2A TO-252-2 SiC Diodes ROHS

1.2kV 1.65V@2A 2A TO-252-2 SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Schottky Diodes Schottky Diodes Rectifiers Diodes
Product Number IDM02G120C5 1183868-IDM02G120C5 280-IDM02G120C5 IDM02G120C5
Product Name CoolSiC™ Schottky Diodes Diodes, Rectifiers - Single - IDM02G120C5 Schottky Diode and Rectifier Diodes
Life Cycle Stage active and preferred
Package DPAK; PG-TO252-2
RoHS Compliant RoHS RoHS
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