CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8
The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Qc x Vf)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (Tj max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
Telecommunication infrastructure
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
IDH05G120C5 | CoolSiC™ Schottky Diodes
IQD063N15NM5CG | N-Channel Power MOSFET
S25FL256SAGMFB003 | Quad SPI Flash
IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC004NE2LS5 | N-Channel Power MOSFET
BSC010N04LS | N-Channel Power MOSFET
BSC190N15NS3 G | N-Channel Power MOSFET
2EDR8258X | Gate driver ICs
BSC0504NSI | N-Channel Power MOSFET
IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC012N06NS | N-Channel Power MOSFET
IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL65R070C7 | 600V and 650V CoolMOS™ C7
IQE006NE2LM5 | N-Channel Power MOSFET
BSC020N03LS G | N-Channel Power MOSFET
IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IDH05G120C5 | CoolSiC™ Schottky Diodes
IQD063N15NM5CG | N-Channel Power MOSFET
S25FL256SAGMFB003 | Quad SPI Flash
IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC004NE2LS5 | N-Channel Power MOSFET
BSC010N04LS | N-Channel Power MOSFET
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CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8
The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- Telecommunication infrastructure
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- IDH05G120C5 |
CoolSiC™ Schottky Diodes
- IQD063N15NM5CG |
N-Channel Power MOSFET
- S25FL256SAGMFB003 |
Quad SPI Flash
- IPZA65R029CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC004NE2LS5 |
N-Channel Power MOSFET
- BSC010N04LS |
N-Channel Power MOSFET
- BSC190N15NS3 G |
N-Channel Power MOSFET
- 2EDR8258X |
Gate driver ICs
- BSC0504NSI |
N-Channel Power MOSFET
- IPD80R900P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL60R075CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC012N06NS |
N-Channel Power MOSFET
- IPT60R028G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R075CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL65R070C7 |
600V and 650V CoolMOS™ C7
- IQE006NE2LM5 |
N-Channel Power MOSFET
- BSC020N03LS G |
N-Channel Power MOSFET
- IPT60R080G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IDH05G120C5 |
CoolSiC™ Schottky Diodes
- IQD063N15NM5CG |
N-Channel Power MOSFET
- S25FL256SAGMFB003 |
Quad SPI Flash
- IPZA65R029CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC004NE2LS5 |
N-Channel Power MOSFET
- BSC010N04LS |
N-Channel Power MOSFET
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