Infineon Technologies AG CoolSiC™ Schottky Diodes IDL08G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDR8258X | Gate driver ICs BSC0504NSI | N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 IQE006NE2LM5 | N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET 1 2 3 4 5
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Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDR8258X | Gate driver ICs BSC0504NSI | N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 IQE006NE2LM5 | N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDL08G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDL08G65C5
CoolSiC™ Schottky Diodes IDL08G65C5
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDR8258X | Gate driver ICs BSC0504NSI | N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 IQE006NE2LM5 | N-Channel Power MOSFET BSC020N03LS G | N-Channel Power MOSFET IPT60R080G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IQD063N15NM5CG | N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.

The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Qc x Vf)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (Tj max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IQD063N15NM5CG |
    N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • 2EDR8258X |
    Gate driver ICs
  • BSC0504NSI |
    N-Channel Power MOSFET
  • IPD80R900P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R075CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC012N06NS |
    N-Channel Power MOSFET
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R075CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL65R070C7 |
    600V and 650V CoolMOS™ C7
  • IQE006NE2LM5 |
    N-Channel Power MOSFET
  • BSC020N03LS G |
    N-Channel Power MOSFET
  • IPT60R080G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IQD063N15NM5CG |
    N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDL08G65C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package PG-VSON-4
RoHS Compliant RoHS
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