CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Summary of Features
Improved figure of merit (Qc x Vf)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (Tj max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
Smart speaker designs
Designers who used this product also designed with
BAS70-05W | Schottky Diodes
1EDN7512G | Gate driver ICs
IRFHS9301 | P-Channel Power MOSFET
1EDN8511B | Gate driver ICs
IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDN7550B | Gate driver ICs
IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G | CoolSET™ Quasi Resonant
SN7002W | Small signal/small power MOSFET
IPW60R037CM8 | 600 V CoolMOS™ 8
BSC010N04LS | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDN7511B | Gate driver ICs
2EDS8265H | Gate driver ICs
IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC035N10NS5 | N-Channel Power MOSFET
IPD025N06N | N-Channel Power MOSFET
IRF7416PBF-1 | P-Channel Power MOSFET
IPL65R070C7 | 600V and 650V CoolMOS™ C7
BAS70-05W | Schottky Diodes
1EDN7512G | Gate driver ICs
IRFHS9301 | P-Channel Power MOSFET
1EDN8511B | Gate driver ICs
IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
1EDN7550B | Gate driver ICs
IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G | CoolSET™ Quasi Resonant
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CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
Summary of Features
- Improved figure of merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- Smart speaker designs
Designers who used this product also designed with
- BAS70-05W |
Schottky Diodes
- 1EDN7512G |
Gate driver ICs
- IRFHS9301 |
P-Channel Power MOSFET
- 1EDN8511B |
Gate driver ICs
- IPT60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDN7550B |
Gate driver ICs
- IPL60R125C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- SN7002W |
Small signal/small power MOSFET
- IPW60R037CM8 |
600 V CoolMOS™ 8
- BSC010N04LS |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDN7511B |
Gate driver ICs
- 2EDS8265H |
Gate driver ICs
- IPL60R104C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL60R095CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC035N10NS5 |
N-Channel Power MOSFET
- IPD025N06N |
N-Channel Power MOSFET
- IRF7416PBF-1 |
P-Channel Power MOSFET
- IPL65R070C7 |
600V and 650V CoolMOS™ C7
- BAS70-05W |
Schottky Diodes
- 1EDN7512G |
Gate driver ICs
- IRFHS9301 |
P-Channel Power MOSFET
- 1EDN8511B |
Gate driver ICs
- IPT60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 1EDN7550B |
Gate driver ICs
- IPL60R125C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G |
CoolSET™ Quasi Resonant
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