Infineon Technologies AG CoolSiC™ Schottky Diodes IDL06G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Smart speaker designs Designers who used this product also designed with BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC010N04LS | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs 2EDS8265H | Gate driver ICs IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET IRF7416PBF-1 | P-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5
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Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Smart speaker designs Designers who used this product also designed with BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC010N04LS | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs 2EDS8265H | Gate driver ICs IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET IRF7416PBF-1 | P-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDL06G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDL06G65C5
CoolSiC™ Schottky Diodes IDL06G65C5
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). Summary of Features Improved figure of merit (Qc x Vf) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (Tj max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Smart speaker designs Designers who used this product also designed with BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC010N04LS | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs 2EDS8265H | Gate driver ICs IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET IRF7416PBF-1 | P-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 BAS70-05W | Schottky Diodes 1EDN7512G | Gate driver ICs IRFHS9301 | P-Channel Power MOSFET 1EDN8511B | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8

The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.

The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).


Summary of Features

  • Improved figure of merit (Qc x Vf)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (Tj max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Smart speaker designs

Designers who used this product also designed with


  • BAS70-05W |
    Schottky Diodes
  • 1EDN7512G |
    Gate driver ICs
  • IRFHS9301 |
    P-Channel Power MOSFET
  • 1EDN8511B |
    Gate driver ICs
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN7550B |
    Gate driver ICs
  • IPL60R125C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • SN7002W |
    Small signal/small power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • 2EDS8265H |
    Gate driver ICs
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R095CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • IPD025N06N |
    N-Channel Power MOSFET
  • IRF7416PBF-1 |
    P-Channel Power MOSFET
  • IPL65R070C7 |
    600V and 650V CoolMOS™ C7
  • BAS70-05W |
    Schottky Diodes
  • 1EDN7512G |
    Gate driver ICs
  • IRFHS9301 |
    P-Channel Power MOSFET
  • 1EDN8511B |
    Gate driver ICs
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN7550B |
    Gate driver ICs
  • IPL60R125C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant

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Supplier's Site Datasheet
650V Independent Type 1.5V@6A 6A VSON-4(8x8) SiC Diodes ROHS

650V Independent Type 1.5V@6A 6A VSON-4(8x8) SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Schottky Diodes Diodes
Product Number IDL06G65C5 IDL06G65C5
Product Name CoolSiC™ Schottky Diodes Diodes
Life Cycle Stage active and preferred
Package PG-VSON-4
RoHS Compliant RoHS RoHS
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