Infineon Technologies AG CoolSiC™ Schottky Diodes IDL04G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant BSC007N04LS6 | N-Channel Power MOSFET BSS84P | Small signal/small power MOSFET IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet
Description
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant BSC007N04LS6 | N-Channel Power MOSFET BSS84P | Small signal/small power MOSFET IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDL04G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDL04G65C5
CoolSiC™ Schottky Diodes IDL04G65C5
CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LSI | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant BSC007N04LS6 | N-Channel Power MOSFET BSS84P | Small signal/small power MOSFET IPT60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R900P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IRS21864S | Gate driver ICs IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4

CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8

The CoolSiC™ Schottky diode 650 V, 4 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPT60R125G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD80R900P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IRS21864S |
    Gate driver ICs
  • IPT60R040S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R115CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R105P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate driver ICs
  • ICE5QR1680BG |
    CoolSET™ Quasi Resonant
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • BSS84P |
    Small signal/small power MOSFET
  • IPT60R125G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD80R900P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IRS21864S |
    Gate driver ICs
  • IPT60R040S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R115CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R105P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDL04G65C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package PG-VSON-4
RoHS Compliant RoHS
Unlock Full Specs
to access all available technical data