Infineon Technologies AG CoolSiC™ Schottky Diodes IDK16G120C5

1200 V Silicon Carbide Schottky diode in D²PAK real 2-pin package The CoolSiC™ Schottky diodes generation 5 1200 V, 16 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation. Summary of Features Zero Qrr leading to no reverse recovery losses High surge current capability Real two-pin package with 4.7 mm creepage and 4.4 mm clearance distances Tight forward voltage distribution Temperature-independ ent switching behavior Low forward voltage even at high operating temperature Benefits Enabling higher frequency / increased power density in compact designs System size/cost saving due to reduced heatsink requirements and smaller magnetics Reduce a risk of partial discharge on the surface (real 2-pin) System efficiency improvement over Si diodes System reliability improvement Reduced EMI RoHS II standard compliant (Pb-free die attach) Applications 1-phase string inverter solutions Motor Control Photovoltaic Power conversion Uninterruptible power supplies (UPS) Designers who used this product also designed with IGB20N65S5 | IGBT discretes IDK12G65C5 | CoolSiC™ Schottky Diodes IKB20N65EH5 | IGBT discretes IKB40N65EH5 | IGBT discretes AIMBG120R040M1 | Silicon Carbide MOSFET Discretes 1ED3125MU12F | Gate driver ICs IPD80R2K7C3A | Automotive MOSFET IMBG120R078M2H | Silicon Carbide MOSFET Discretes IGB50N65H5 | IGBT discretes IGB20N65S5 | IGBT discretes IDK12G65C5 | CoolSiC™ Schottky Diodes IKB20N65EH5 | IGBT discretes IKB40N65EH5 | IGBT discretes AIMBG120R040M1 | Silicon Carbide MOSFET Discretes 1ED3125MU12F | Gate driver ICs IPD80R2K7C3A | Automotive MOSFET IMBG120R078M2H | Silicon Carbide MOSFET Discretes 1 2 3