CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin
The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
1-phase string inverter solutions
DIN rail power supplies
Designers who used this product also designed with
IDK16G120C5 | CoolSiC™ Schottky Diodes
IMBG120R078M2H | Silicon Carbide MOSFET Discretes
IKB20N65EH5 | IGBT discretes
IKB40N65EH5 | IGBT discretes
IGB20N65S5 | IGBT discretes
IGB50N65H5 | IGBT discretes
IDK16G120C5 | CoolSiC™ Schottky Diodes
IMBG120R078M2H | Silicon Carbide MOSFET Discretes
IKB20N65EH5 | IGBT discretes
IKB40N65EH5 | IGBT discretes
IGB20N65S5 | IGBT discretes
IGB50N65H5 | IGBT discretes
IDK16G120C5 | CoolSiC™ Schottky Diodes
IMBG120R078M2H | Silicon Carbide MOSFET Discretes
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CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin
The CoolSiC™ Schottky diode 650 V, 12 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 1-phase string inverter solutions
- DIN rail power supplies
Designers who used this product also designed with
- IDK16G120C5 |
CoolSiC™ Schottky Diodes
- IMBG120R078M2H |
Silicon Carbide MOSFET Discretes
- IKB20N65EH5 |
IGBT discretes
- IKB40N65EH5 |
IGBT discretes
- IGB20N65S5 |
IGBT discretes
- IGB50N65H5 |
IGBT discretes
- IDK16G120C5 |
CoolSiC™ Schottky Diodes
- IMBG120R078M2H |
Silicon Carbide MOSFET Discretes
- IKB20N65EH5 |
IGBT discretes
- IKB40N65EH5 |
IGBT discretes
- IGB20N65S5 |
IGBT discretes
- IGB50N65H5 |
IGBT discretes
- IDK16G120C5 |
CoolSiC™ Schottky Diodes
- IMBG120R078M2H |
Silicon Carbide MOSFET Discretes
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