Infineon Technologies AG CoolSiC™ Schottky Diodes IDK08G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster DIN rail power supplies Designers who used this product also designed with ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet
Description
CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster DIN rail power supplies Designers who used this product also designed with ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET 1 2 3
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDK08G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDK08G65C5
CoolSiC™ Schottky Diodes IDK08G65C5
CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive instrument cluster DIN rail power supplies Designers who used this product also designed with ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ISP14EP15LM | P-Channel Power MOSFET IDK05G120C5 | CoolSiC™ Schottky Diodes IPB65R110CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET 1 2 3

CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive instrument cluster
  • DIN rail power supplies

Designers who used this product also designed with


  • ISP14EP15LM |
    P-Channel Power MOSFET
  • IDK05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPB65R110CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQDH45N04LM6CG |
    N-Channel Power MOSFET
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPN80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQD009N06NM5CG |
    N-Channel Power MOSFET
  • BSZ068N06NS |
    N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ISP14EP15LM |
    P-Channel Power MOSFET
  • IDK05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPB65R110CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQDH45N04LM6CG |
    N-Channel Power MOSFET
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPN80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQD009N06NM5CG |
    N-Channel Power MOSFET
  • BSZ068N06NS |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Diodes, Rectifiers - Single - IDK08G65C5 - 205075-IDK08G65C5 - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Single - IDK08G65C5
205075-IDK08G65C5
Diodes, Rectifiers - Single - IDK08G65C5 205075-IDK08G65C5
Manufacturer: Infineon Technologies Win Source Part Number: 205075-IDK08G65C5 Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Operating Temperature - Junction: -55°C to 175°C Categories: Discrete Semiconductor Products Case / Package: PG-TO263-2 Speed(Frequency): No Recovery Time > 500mA (Io) Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205075-IDK08G65C5
Packaging: Reel - TR
Mounting: SMD (SMT)
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.4mA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Operating Temperature - Junction: -55°C to 175°C
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-2
Speed(Frequency): No Recovery Time > 500mA (Io)
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Schottky 650V 8A Diode and Rectifier - 280-IDK08G65C5 - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Schottky 650V 8A Diode and Rectifier
280-IDK08G65C5
Schottky 650V 8A Diode and Rectifier 280-IDK08G65C5
DIODE SCHOTTKY 650V 8A TO263-2 Product overview: IDK08G65C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 650V, 8A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650V, 8A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDK08G65C5 can be used for catalog matching and distributor lookup.

DIODE SCHOTTKY 650V 8A TO263-2 Product overview: IDK08G65C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 650V, 8A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650V, 8A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDK08G65C5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
650V Independent Type 1.5V@8A 8A TO-263-2 SiC Diodes ROHS

650V Independent Type 1.5V@8A 8A TO-263-2 SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Schottky Diodes Schottky Diodes Rectifiers Diodes
Product Number IDK08G65C5 205075-IDK08G65C5 280-IDK08G65C5 IDK08G65C5
Product Name CoolSiC™ Schottky Diodes Diodes, Rectifiers - Single - IDK08G65C5 Schottky 650V 8A Diode and Rectifier Diodes
Life Cycle Stage active
Package D2PAK; PG-TO263-2 PG-TO263-2 Reel - TR
RoHS Compliant RoHS RoHS
VF 1.5 volts 1.8 volts
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