CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
1-phase string inverter solutions
48 V intermediate bus converter (IBC)
Designers who used this product also designed with
IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs
IPD60R180CM8 | 600 V CoolMOS™ 8
ICE2QR2280G | CoolSET™ Quasi Resonant
IPD200N15N3 G N-Channel Power MOSFET
IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs
IPD60R180CM8 | 600 V CoolMOS™ 8
ICE2QR2280G | CoolSET™ Quasi Resonant
IPD200N15N3 G N-Channel Power MOSFET
IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs
IPD60R180CM8 | 600 V CoolMOS™ 8
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CoolSiC™ Schottky diode 650 V G5 in D2PAK real2pin
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in D2PAK real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 1-phase string inverter solutions
- 48 V intermediate bus converter (IBC)
Designers who used this product also designed with
- IPB60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IPD60R180CM8 |
600 V CoolMOS™ 8
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- IPD200N15N3 G
N-Channel Power MOSFET
- IPB60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IPD60R180CM8 |
600 V CoolMOS™ 8
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- IPD200N15N3 G
N-Channel Power MOSFET
- IPB60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IPD60R180CM8 |
600 V CoolMOS™ 8
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