Infineon Technologies AG CoolSiC™ Schottky Diodes IDH20G65C5

600 V Silicion Carbide Schottky diode in real2pin package

The CoolSiC™ Schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q _c x V _f).

Summary of Features

• Improved figure of merit (Q _c x V _f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T _j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability
  

Potential Applications

• Solar
• UPS
• Motor drives

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The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Maximum Continuous Forward Current = 20A
Diode Configuration = Single
Number of Elements per Chip = 1
Peak Reverse Repetitive Voltage = 650V
Mounting Type = Through Hole
Package Type = TO-220
Diode Type = SiC Schottky
Diode Technology = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.1V

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Maximum Continuous Forward Current = 20A
Diode Configuration = Single
Number of Elements per Chip = 1
Peak Reverse Repetitive Voltage = 650V
Mounting Type = Through Hole
Package Type = TO-220
Diode Type = SiC Schottky
Diode Technology = SiC Schottky
Pin Count = 2
Maximum Forward Voltage Drop = 2.1V
Delivery on production packaging - Tube. This product is non-returnable.