Infineon Technologies AG CoolSiC™ Schottky Diodes IDH20G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive body control module (BCM) EV charging Designers who used this product also designed with IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDI20N12AF | Gate driver ICs BSC047N08NS3 G | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive body control module (BCM) EV charging Designers who used this product also designed with IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDI20N12AF | Gate driver ICs BSC047N08NS3 G | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

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Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH20G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH20G65C5
CoolSiC™ Schottky Diodes IDH20G65C5
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive body control module (BCM) EV charging Designers who used this product also designed with IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC004NE2LS5 | N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1EDI20N12AF | Gate driver ICs BSC047N08NS3 G | N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive body control module (BCM)
  • EV charging

Designers who used this product also designed with


  • IPP051N15N5 |
    N-Channel Power MOSFET
  • IRLML0030PBF-1 |
    N-Channel Power MOSFET
  • IR11682SPBF |
    Synchronous Rectification ICs
  • IPZ60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • IPZ60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSO220N03MD G |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • 1EDI20N12AF |
    Gate driver ICs
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • 2EDL8124G |
    Gate driver ICs
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP051N15N5 |
    N-Channel Power MOSFET
  • IRLML0030PBF-1 |
    N-Channel Power MOSFET
  • IR11682SPBF |
    Synchronous Rectification ICs
  • IPZ60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • IPZ60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSO220N03MD G |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDH20G65C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-220; PG-TO220-2
RoHS Compliant RoHS
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