CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
Automotive body control module (BCM)
EV charging
Designers who used this product also designed with
IPP051N15N5 | N-Channel Power MOSFET
IRLML0030PBF-1 | N-Channel Power MOSFET
IR11682SPBF | Synchronous Rectification ICs
IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G | CoolSET™ Quasi Resonant
IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSO220N03MD G | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
2EDN7524R | Gate driver ICs
BSC004NE2LS5 | N-Channel Power MOSFET
IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC026N08NS5 | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
1EDI20N12AF | Gate driver ICs
BSC047N08NS3 G | N-Channel Power MOSFET
2EDL8124G | Gate driver ICs
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP051N15N5 | N-Channel Power MOSFET
IRLML0030PBF-1 | N-Channel Power MOSFET
IR11682SPBF | Synchronous Rectification ICs
IPZ60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G | CoolSET™ Quasi Resonant
IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSO220N03MD G | N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 20 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- Automotive body control module (BCM)
- EV charging
Designers who used this product also designed with
- IPP051N15N5 |
N-Channel Power MOSFET
- IRLML0030PBF-1 |
N-Channel Power MOSFET
- IR11682SPBF |
Synchronous Rectification ICs
- IPZ60R099P6 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- IPZ60R040C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSO220N03MD G |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 2EDN7524R |
Gate driver ICs
- BSC004NE2LS5 |
N-Channel Power MOSFET
- IPL60R060CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC026N08NS5 |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- 1EDI20N12AF |
Gate driver ICs
- BSC047N08NS3 G |
N-Channel Power MOSFET
- 2EDL8124G |
Gate driver ICs
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP051N15N5 |
N-Channel Power MOSFET
- IRLML0030PBF-1 |
N-Channel Power MOSFET
- IR11682SPBF |
Synchronous Rectification ICs
- IPZ60R099P6 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G |
CoolSET™ Quasi Resonant
- IPZ60R040C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSO220N03MD G |
N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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