Infineon Technologies AG CoolSiC™ Schottky Diodes IDH10G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Edge computing EV charging General purpose motor drive - variating frequency and voltage Designers who used this product also designed with IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR2010S | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R080CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET ISC022N10NM6 | N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET IR2117 | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Edge computing EV charging General purpose motor drive - variating frequency and voltage Designers who used this product also designed with IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR2010S | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R080CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET ISC022N10NM6 | N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET IR2117 | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH10G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH10G65C5
CoolSiC™ Schottky Diodes IDH10G65C5
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Edge computing EV charging General purpose motor drive - variating frequency and voltage Designers who used this product also designed with IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R024CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IR2010S | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R080CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET ISC022N10NM6 | N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET IR2117 | Gate driver ICs BSC146N10LS5 | N-Channel Power MOSFET IPP60R170CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP037N08N3 G | N-Channel Power MOSFET IPA80R280P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP034N08N5 | N-Channel Power MOSFET IPW60R070P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275F | Gate driver ICs ICE2QR0680Z | CoolSET™ Quasi Resonant IPP200N15N3 G | N-Channel Power MOSFET 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 10 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Edge computing
  • EV charging
  • General purpose motor drive - variating frequency and voltage

Designers who used this product also designed with


  • IPP60R170CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP037N08N3 G |
    N-Channel Power MOSFET
  • IPA80R280P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP034N08N5 |
    N-Channel Power MOSFET
  • IPW60R070P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • ICE2QR0680Z |
    CoolSET™ Quasi Resonant
  • IPP200N15N3 G |
    N-Channel Power MOSFET
  • IPP60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW65R095C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R024CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IR2010S |
    Gate driver ICs
  • IPP60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP65R110CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW65R080CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ISC022N10NM6 |
    N-Channel Power MOSFET
  • BSP125 |
    Small signal/small power MOSFET
  • IR2117 |
    Gate driver ICs
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • IPP60R170CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP037N08N3 G |
    N-Channel Power MOSFET
  • IPA80R280P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP034N08N5 |
    N-Channel Power MOSFET
  • IPW60R070P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDF7275F |
    Gate driver ICs
  • ICE2QR0680Z |
    CoolSET™ Quasi Resonant
  • IPP200N15N3 G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
Schottky 650V 10A TO-220 Diode and Rectifier - 280-IDH10G65C5 - ERSAELECTRONICS PTE. LTD.
Singapore
Schottky 650V 10A TO-220 Diode and Rectifier
280-IDH10G65C5
Schottky 650V 10A TO-220 Diode and Rectifier 280-IDH10G65C5
Rectifier Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220 Tube / DIODE SCHOTTKY 650V 10A TO220-2 Product overview: IDH10G65C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 650V, 10A, TO-220. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650V, 10A, TO-220, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDH10G65C5 can be used for catalog matching and distributor lookup.

Rectifier Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220 Tube / DIODE SCHOTTKY 650V 10A TO220-2 Product overview: IDH10G65C5 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 650V, 10A, TO-220. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 650V, 10A, TO-220, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDH10G65C5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Diodes, Rectifiers - Single - IDH10G65C5 - 205074-IDH10G65C5 - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Single - IDH10G65C5
205074-IDH10G65C5
Diodes, Rectifiers - Single - IDH10G65C5 205074-IDH10G65C5
Manufacturer: Infineon Technologies Win Source Part Number: 205074-IDH10G65C5 Packaging: Tube/Rail Mounting: Through Hole Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180μA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Operating Temperature - Junction: -55°C to 175°C Family Name: IDH10G65C5 Categories: Discrete Semiconductor Products Status: Active Case / Package: PG-TO220-2-1 Speed(Frequency): No Recovery Time > 500mA (Io) Alternative Parts (Cross-Reference): SCS110AG; STPSC1006D; SCS210AG; LFUSCD10065A; ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205074-IDH10G65C5
Packaging: Tube/Rail
Mounting: Through Hole
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180μA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Operating Temperature - Junction: -55°C to 175°C
Family Name: IDH10G65C5
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: PG-TO220-2-1
Speed(Frequency): No Recovery Time > 500mA (Io)
Alternative Parts (Cross-Reference): SCS110AG; STPSC1006D; SCS210AG; LFUSCD10065A;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
650V Independent Type 1.5V@10A 10A TO-220-2 SiC Diodes ROHS

650V Independent Type 1.5V@10A 10A TO-220-2 SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Schottky Diodes Rectifiers Schottky Diodes Diodes
Product Number IDH10G65C5 280-IDH10G65C5 205074-IDH10G65C5 IDH10G65C5
Product Name CoolSiC™ Schottky Diodes Schottky 650V 10A TO-220 Diode and Rectifier Diodes, Rectifiers - Single - IDH10G65C5 Diodes
Life Cycle Stage active and preferred Active
Package TO-220; PG-TO220-2 Tube/Rail PG-TO220-2-1
RoHS Compliant RoHS RoHS
VF 1.5 volts 1.7 volts
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