Infineon Technologies AG CoolSiC™ Schottky Diodes IDH08SG60C

Description
Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering. Summary of Features Benchmark switching behavior No reverse recovery charge Temperature independent switching behavior High operating temperature (T j max 175°C) Benefits System efficiency improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI Potential Applications Server Telecom Solar Lighting PC power AC-DC Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes S25FL128SDPMFV000 | Quad SPI Flash BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes 1 2 3
Request a Quote Datasheet
Description
Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering. Summary of Features Benchmark switching behavior No reverse recovery charge Temperature independent switching behavior High operating temperature (T j max 175°C) Benefits System efficiency improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI Potential Applications Server Telecom Solar Lighting PC power AC-DC Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes S25FL128SDPMFV000 | Quad SPI Flash BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH08SG60C - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH08SG60C
CoolSiC™ Schottky Diodes IDH08SG60C
Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering. Summary of Features Benchmark switching behavior No reverse recovery charge Temperature independent switching behavior High operating temperature (T j max 175°C) Benefits System efficiency improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI Potential Applications Server Telecom Solar Lighting PC power AC-DC Applications DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes IMZ120R030M1H | Silicon Carbide MOSFET Discretes S25FL128SDPMFV000 | Quad SPI Flash BSZ340N08NS3 G | N-Channel Power MOSFET IDH05G120C5 | CoolSiC™ Schottky Diodes IRS27952 | Half-bridge and LLC controller IR1168SPBF | Synchronous Rectification ICs IKZA50N65SS5 | IGBT discretes IPZA60R016CM8 | 600 V CoolMOS™ 8 IMBG120R234M2H | Silicon Carbide MOSFET Discretes IDW40G120C5B | CoolSiC™ Schottky Diodes 1 2 3

Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.


Summary of Features

  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)

Benefits

  • System efficiency improvement compared to Si
    diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power
    density
  • Higher system reliability due to lower operating
    temperature
  • Reduced EMI

Potential Applications

  • Server
  • Telecom
  • Solar
  • Lighting
  • PC power
  • AC-DC

Applications

  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • BSZ340N08NS3 G |
    N-Channel Power MOSFET
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IRS27952 |
    Half-bridge and LLC controller
  • IR1168SPBF |
    Synchronous Rectification ICs
  • IKZA50N65SS5 |
    IGBT discretes
  • IPZA60R016CM8 |
    600 V CoolMOS™ 8
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IDW40G120C5B |
    CoolSiC™ Schottky Diodes
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • S25FL128SDPMFV000 |
    Quad SPI Flash
  • BSZ340N08NS3 G |
    N-Channel Power MOSFET
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IRS27952 |
    Half-bridge and LLC controller
  • IR1168SPBF |
    Synchronous Rectification ICs
  • IKZA50N65SS5 |
    IGBT discretes
  • IPZA60R016CM8 |
    600 V CoolMOS™ 8
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IDW40G120C5B |
    CoolSiC™ Schottky Diodes

1
2
3

Supplier's Site Datasheet
Schottky 600V 8A TO220 Diode and Rectifier - 280-IDH08SG60C - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Schottky 600V 8A TO220 Diode and Rectifier
280-IDH08SG60C
Schottky 600V 8A TO220 Diode and Rectifier 280-IDH08SG60C
DIODE SCHOTTKY 600V 8A TO220-2 Product overview: IDH08SG60C from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 600V, 8A, TO220. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 600V, 8A, TO220, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDH08SG60C can be used for catalog matching and distributor lookup.

DIODE SCHOTTKY 600V 8A TO220-2 Product overview: IDH08SG60C from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 600V, 8A, TO220. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 600V, 8A, TO220, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDH08SG60C can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Diodes, Rectifiers - Single - IDH08SG60C - 205073-IDH08SG60C - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Single - IDH08SG60C
205073-IDH08SG60C
Diodes, Rectifiers - Single - IDH08SG60C 205073-IDH08SG60C
Manufacturer: Infineon Technologies Win Source Part Number: 205073-IDH08SG60C Packaging: Tube/Rail Mounting: Through Hole Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70μA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Operating Temperature - Junction: -55°C to 175°C Categories: Discrete Semiconductor Products Case / Package: PG-TO220-2 Speed(Frequency): No Recovery Time > 500mA (Io) Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205073-IDH08SG60C
Packaging: Tube/Rail
Mounting: Through Hole
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 8A
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70μA @ 600V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Operating Temperature - Junction: -55°C to 175°C
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-2
Speed(Frequency): No Recovery Time > 500mA (Io)
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Schottky Diodes Rectifiers Schottky Diodes
Product Number IDH08SG60C 280-IDH08SG60C 205073-IDH08SG60C
Product Name CoolSiC™ Schottky Diodes Schottky 600V 8A TO220 Diode and Rectifier Diodes, Rectifiers - Single - IDH08SG60C
Life Cycle Stage active
Package TO-220; PG-TO220-2 Tube/Rail PG-TO220-2
RoHS Compliant RoHS
VF 1.8 volts 2.1 volts
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