CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
Data center and AI data center solutions
DIN rail power supplies
Edge computing
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC030N08NS5 | N-Channel Power MOSFET
IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC011N03LS | N-Channel Power MOSFET
IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC040N08NS5 | N-Channel Power MOSFET
IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC014N04LS | N-Channel Power MOSFET
IPP65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R037CM8 | 600 V CoolMOS™ 8
BSC021N08NS5 | N-Channel Power MOSFET
IPP051N15N5 | N-Channel Power MOSFET
BSS169 | N-Channel Depletion Mode MOSFET
IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC004NE2LS5 | N-Channel Power MOSFET
IPW65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC030N08NS5 | N-Channel Power MOSFET
IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC011N03LS | N-Channel Power MOSFET
IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC040N08NS5 | N-Channel Power MOSFET
IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC014N04LS | N-Channel Power MOSFET
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CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- Data center and AI data center solutions
- DIN rail power supplies
- Edge computing
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- IPP60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC030N08NS5 |
N-Channel Power MOSFET
- IPA60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC011N03LS |
N-Channel Power MOSFET
- IPD80R1K4P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC040N08NS5 |
N-Channel Power MOSFET
- IPW60R045P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC014N04LS |
N-Channel Power MOSFET
- IPP65R065C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R037CM8 |
600 V CoolMOS™ 8
- BSC021N08NS5 |
N-Channel Power MOSFET
- IPP051N15N5 |
N-Channel Power MOSFET
- BSS169 |
N-Channel Depletion Mode MOSFET
- IPW60R070CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC004NE2LS5 |
N-Channel Power MOSFET
- IPW65R065C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC030N08NS5 |
N-Channel Power MOSFET
- IPA60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC011N03LS |
N-Channel Power MOSFET
- IPD80R1K4P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC040N08NS5 |
N-Channel Power MOSFET
- IPW60R045P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC014N04LS |
N-Channel Power MOSFET
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