Infineon Technologies AG CoolSiC™ Schottky Diodes IDH08G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET IPP65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC021N08NS5 | N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPW65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET 1 2 3 4 5
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Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET IPP65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC021N08NS5 | N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPW65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

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Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH08G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH08G65C5
CoolSiC™ Schottky Diodes IDH08G65C5
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions DIN rail power supplies Edge computing Uninterruptible power supplies (UPS) Designers who used this product also designed with IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET IPP65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC021N08NS5 | N-Channel Power MOSFET IPP051N15N5 | N-Channel Power MOSFET BSS169 | N-Channel Depletion Mode MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC004NE2LS5 | N-Channel Power MOSFET IPW65R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET IPW60R045P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC014N04LS | N-Channel Power MOSFET 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 8 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Data center and AI data center solutions
  • DIN rail power supplies
  • Edge computing
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPP60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • IPA60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC011N03LS |
    N-Channel Power MOSFET
  • IPD80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • IPW60R045P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC014N04LS |
    N-Channel Power MOSFET
  • IPP65R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • BSC021N08NS5 |
    N-Channel Power MOSFET
  • IPP051N15N5 |
    N-Channel Power MOSFET
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • IPW60R070CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • IPW65R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • IPA60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC011N03LS |
    N-Channel Power MOSFET
  • IPD80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • IPW60R045P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC014N04LS |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDH08G65C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-220; PG-TO220-2
RoHS Compliant RoHS
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