Infineon Technologies AG Single Diodes IDH05G120C5XKSA1

Diode Silicon Carbide Schottky 1200V 5A (DC) Through Hole PG-TO220-2-1

DIODE SIL CARB 1.2KV 5A TO220-1

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

Manufacturer: Infineon Technologies
Win Source Part Number: 874291-IDH05G120C5XKSA1
Series: CoolSiC™+
Features: Diode Silicon Carbide Schottky 1200 V 5A (DC) Through Hole PG-TO220-2-1
Speed: No Recovery Time > 500mA (Io)
Package: TO-220-2
Package: Tube
Mounting: Through Hole
Family Name: IDH05G120
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-2-1
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080

Diode Schottky Diode 1200V 19.1A 2-Pin TO-220 Tube

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 19.1A
Number of Elements per Chip = 1
Peak Reverse Repetitive Voltage = 1200V
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2+Tab
Maximum Forward Voltage Drop = 2.6V

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diode Configuration = Single
Maximum Continuous Forward Current = 19.1A
Number of Elements per Chip = 1
Peak Reverse Repetitive Voltage = 1200V
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2+Tab
Maximum Forward Voltage Drop = 2.6V
Delivery on production packaging - Tube. This product is non-returnable.

The Infineon thinQ!â„¢ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Maximum Continuous Forward Current = 19.1A
Diode Configuration = Single
Number of Elements per Chip = 1
Peak Reverse Repetitive Voltage = 1200V
Mounting Type = Through Hole
Package Type = TO-220
Diode Technology = SiC Schottky
Diode Type = SiC Schottky
Pin Count = 2+Tab
Maximum Forward Voltage Drop = 2.6V