Infineon Technologies AG CoolSiC™ Schottky Diodes IDH04G65C6

Description
Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). Summary of Features The lowest V F: 1.25V Best-in-class figure of merit (Q c x V F) No reverse recovery charge Temperature independent switching behavior High dv/dt ruggedness Optimized thermal behavior Benefits Improved system efficiency over all load conditions Increased system power density Reduced cooling requirements and increased system reliability Enables extremely fast switching Easy and effective match with CoolMOS™ 7 families Optimal price performance Potential Applications Server Telecom PC power Solar Lighting Applications 48 V intermediate bus converter (IBC) Bringing a whole new lifestyle and health experience to today’s connected citizen General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs BSC009NE2LS | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPP65R190CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET BSC014N06NS | N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs 1 2 3 4
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Description
Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). Summary of Features The lowest V F: 1.25V Best-in-class figure of merit (Q c x V F) No reverse recovery charge Temperature independent switching behavior High dv/dt ruggedness Optimized thermal behavior Benefits Improved system efficiency over all load conditions Increased system power density Reduced cooling requirements and increased system reliability Enables extremely fast switching Easy and effective match with CoolMOS™ 7 families Optimal price performance Potential Applications Server Telecom PC power Solar Lighting Applications 48 V intermediate bus converter (IBC) Bringing a whole new lifestyle and health experience to today’s connected citizen General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs BSC009NE2LS | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPP65R190CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET BSC014N06NS | N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs 1 2 3 4
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH04G65C6 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH04G65C6
CoolSiC™ Schottky Diodes IDH04G65C6
Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). Summary of Features The lowest V F: 1.25V Best-in-class figure of merit (Q c x V F) No reverse recovery charge Temperature independent switching behavior High dv/dt ruggedness Optimized thermal behavior Benefits Improved system efficiency over all load conditions Increased system power density Reduced cooling requirements and increased system reliability Enables extremely fast switching Easy and effective match with CoolMOS™ 7 families Optimal price performance Potential Applications Server Telecom PC power Solar Lighting Applications 48 V intermediate bus converter (IBC) Bringing a whole new lifestyle and health experience to today’s connected citizen General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs BSC009NE2LS | N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 IPP65R190CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET BSP125 | Small signal/small power MOSFET BSC014N06NS | N-Channel Power MOSFET ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs BSC010N04LSI | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET BSS123N | Small signal/small power MOSFET IRFR3806 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPD031N03L G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs 1 2 3 4

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650 V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).


Summary of Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Benefits

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Lighting

Applications

  • 48 V intermediate bus converter (IBC)
  • Bringing a whole new lifestyle and health experience to today’s connected citizen
  • General purpose motor drive - variating frequency and voltage
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • BSC010N04LSI |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSS123N |
    Small signal/small power MOSFET
  • IRFR3806 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPD031N03L G |
    N-Channel Power MOSFET
  • ICE3PCS02G |
    PFC-CCM (continuous conduction mode) ICs
  • BSC009NE2LS |
    N-Channel Power MOSFET
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • IPP65R190CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSP125 |
    Small signal/small power MOSFET
  • BSC014N06NS |
    N-Channel Power MOSFET
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • BSS123N |
    Small signal/small power MOSFET
  • IRFR3806 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPD031N03L G |
    N-Channel Power MOSFET
  • ICE3PCS02G |
    PFC-CCM (continuous conduction mode) ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDH04G65C6
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-220; PG-TO220-2
RoHS Compliant RoHS
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