Infineon Technologies AG CoolSiC™ Schottky Diodes IDH02G120C5

1200 V Silicion Carbide Schottky diode in TO-220 real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications 48 V intermediate bus converter (IBC) Mobile robots (AGV, AMR) Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC035N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET IDW20G65C5B | CoolSiC™ Schottky Diodes BSC093N15NS5 | N-Channel Power MOSFET IPP320N20N3 G | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs SN7002W | Small signal/small power MOSFET BSC035N10NS5 | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET IDW20G65C5B | CoolSiC™ Schottky Diodes BSC093N15NS5 | N-Channel Power MOSFET IPP320N20N3 G | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs SN7002W | Small signal/small power MOSFET BSC035N10NS5 | N-Channel Power MOSFET 1 2