650 V silicon power diode in TO-247 advanced isolation package
Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.
Summary of Features
650V Emitter Controlled technology
Temperature stable behaviour of key parameters
Low forward voltage (VF)
Low reverse recovery charge (Qrr)
Low reverse recovery current (Irrm)
Maximum junction temperature 175°C
2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
100 % tested isolated mounting surface
Pb-free lead plating
RoHS compliant
Applications
Motor Control
Residential air conditioning: Smart (IoT) and efficient cooling
Designers who used this product also designed with
FP25R12W2T4 | IGBT modules
IKFW50N65DH5 | IGBT discretes
6ED2230S12T | Gate driver ICs
FP25R12W2T4 | IGBT modules
IKFW50N65DH5 | IGBT discretes
6ED2230S12T | Gate driver ICs
FP25R12W2T4 | IGBT modules
IKFW50N65DH5 | IGBT discretes
6ED2230S12T | Gate driver ICs
650 V silicon power diode in TO-247 advanced isolation package
Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.
Summary of Features
- 650V Emitter Controlled technology
- Temperature stable behaviour of key parameters
- Low forward voltage (VF)
- Low reverse recovery charge (Qrr)
- Low reverse recovery current (Irrm)
- Maximum junction temperature 175°C
- 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
- 100 % tested isolated mounting surface
- Pb-free lead plating
- RoHS compliant
Applications
- Motor Control
- Residential air conditioning: Smart (IoT) and efficient cooling
Designers who used this product also designed with
- FP25R12W2T4 |
IGBT modules
- IKFW50N65DH5 |
IGBT discretes
- 6ED2230S12T |
Gate driver ICs
- FP25R12W2T4 |
IGBT modules
- IKFW50N65DH5 |
IGBT discretes
- 6ED2230S12T |
Gate driver ICs
- FP25R12W2T4 |
IGBT modules
- IKFW50N65DH5 |
IGBT discretes
- 6ED2230S12T |
Gate driver ICs
