Infineon Technologies AG Silicon Diodes IDFW40E65D1E

650 V silicon power diode in TO-247 package Rapid 1 switching 650 V, 40 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features 650V emitter controlled technology Temperature stable behavior of key parameters Low forward voltage (VF) Low reverse recovery charge (Qrr) Low reverse recovery current (Irrm) Softness factor >1 Maximum junction temperature 175°C 2500 VRMS electrical isolation, 50/60 Hz, t=1 min 100 % tested isolated mounting surface Pb-free lead plating; RoHS compliant Qualified for ndustrial applications according to the relevant tests of JEDEC[1]47/20/22 Benefits No need to use isolation material and thermal grease 35% reduction in assembling time compared to standard TO-247 with Iso-foils Increased yield eliminating misalignments of isolation foils Up to 10°C lower Tc compared to standard TO-247 with isolation material Up to 20% Iout increase for higher power output Complete manufacturing process control Easy paralleling Applications Automotive high-voltage e-compressor General purpose motor drive - variating frequency and voltage Heating ventilation and air conditioning (HVAC) Designers who used this product also designed with 2ED020I12-F2 | Gate driver ICs IKFW50N60DH3 | IGBT discretes 2ED020I12-F2 | Gate driver ICs IKFW50N60DH3 | IGBT discretes 2ED020I12-F2 | Gate driver ICs IKFW50N60DH3 | IGBT discretes