Infineon Technologies AG CoolSiC™ Schottky Diodes IDDD16G65C6

Description
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions Designers who used this product also designed with IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2
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Description
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions Designers who used this product also designed with IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDDD16G65C6 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDDD16G65C6
CoolSiC™ Schottky Diodes IDDD16G65C6
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications 1-phase string inverter solutions Designers who used this product also designed with IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDQ60R010S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.


Summary of Features

  • Offers best-in-class VF and FOM Qc x VF
  • Improved dv/dt ruggedness
  • Easy and effective match with CoolMOS™ 7 SJ MOSFET families
  • Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
  • Reduced parasitic source inductance improves e iciency and ease-of-use
  • Enables higher power density solutions
  • Exceeding the highest quality standards

Benefits

  • Enabling highest energy efficiency
  • Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
  • Reduced parasitic source inductance improves e iciency and ease-of-use
  • Enables higher power density solutions
  • Exceeding the highest quality standards

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power
  • SMPS

Applications

  • 1-phase string inverter solutions

Designers who used this product also designed with


  • IPDQ60R010S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R065P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPDQ60R010S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R065P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDDD16G65C6
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active
Package DPAK; PG-HDSOP-10
RoHS Compliant RoHS
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