Infineon Technologies AG CoolSiC™ Schottky Diodes IDDD08G65C6

Description
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPT60R016CM8 | 600 V CoolMOS™ 8 IQD005N04NM6CG | N-Channel Power MOSFET IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE046N08LM5CGSC | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Description
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPT60R016CM8 | 600 V CoolMOS™ 8 IQD005N04NM6CG | N-Channel Power MOSFET IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE046N08LM5CGSC | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDDD08G65C6 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDDD08G65C6
CoolSiC™ Schottky Diodes IDDD08G65C6
Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Summary of Features Offers best-in-class VF and FOM Qc x VF Improved dv/dt ruggedness Easy and effective match with CoolMOS™ 7 SJ MOSFET families Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Benefits Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves e iciency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards Potential Applications Telecom Server Solar PC power SMPS Applications DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET 1EDN7550B | Gate driver ICs IPT60R016CM8 | 600 V CoolMOS™ 8 IQD005N04NM6CG | N-Channel Power MOSFET IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQE046N08LM5CGSC | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant SN7002W | Small signal/small power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs 2EDS8165H | Gate driver ICs ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSZ22DN20NS3 G | N-Channel Power MOSFET IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.

The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.


Summary of Features

  • Offers best-in-class VF and FOM Qc x VF
  • Improved dv/dt ruggedness
  • Easy and effective match with CoolMOS™ 7 SJ MOSFET families
  • Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
  • Reduced parasitic source inductance improves e iciency and ease-of-use
  • Enables higher power density solutions
  • Exceeding the highest quality standards

Benefits

  • Enabling highest energy efficiency
  • Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
  • Reduced parasitic source inductance improves e iciency and ease-of-use
  • Enables higher power density solutions
  • Exceeding the highest quality standards

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power
  • SMPS

Applications

  • DIN rail power supplies
  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDS8165H |
    Gate driver ICs
  • ICE2PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC065N06LS5 |
    N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSZ22DN20NS3 G |
    N-Channel Power MOSFET
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • 1EDN7550B |
    Gate driver ICs
  • IPT60R016CM8 |
    600 V CoolMOS™ 8
  • IQD005N04NM6CG |
    N-Channel Power MOSFET
  • IPDD60R125G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPDD60R190G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQE046N08LM5CGSC |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • SN7002W |
    Small signal/small power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 1EDB8275F |
    Gate driver ICs
  • 2EDS8165H |
    Gate driver ICs
  • ICE2PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC065N06LS5 |
    N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSZ22DN20NS3 G |
    N-Channel Power MOSFET
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDDD08G65C6
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active
Package DPAK; PG-HDSOP-10
RoHS Compliant RoHS
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