Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.
The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Summary of Features
Offers best-in-class VF and FOM Qc x VF
Improved dv/dt ruggedness
Easy and effective match with CoolMOS™ 7 SJ MOSFET families
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e iciency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Benefits
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e iciency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Potential Applications
Telecom
Server
Solar
PC power
SMPS
Applications
DIN rail power supplies
Light electric vehicles (LEV)
Telecommunication infrastructure
Designers who used this product also designed with
2EDS8165H | Gate driver ICs
ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs
IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC065N06LS5 | N-Channel Power MOSFET
IQE006NE2LM5CG | N-Channel Power MOSFET
1EDN7511B | Gate driver ICs
BSZ22DN20NS3 G | N-Channel Power MOSFET
IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSZ070N08LS5 | N-Channel Power MOSFET
1EDN7550B | Gate driver ICs
IPT60R016CM8 | 600 V CoolMOS™ 8
IQD005N04NM6CG | N-Channel Power MOSFET
IPDD60R125G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPDD60R190G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IQE046N08LM5CGSC | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
SN7002W | Small signal/small power MOSFET
BSC016N06NS | N-Channel Power MOSFET
1EDB8275F | Gate driver ICs
2EDS8165H | Gate driver ICs
ICE2PCS01G | PFC-CCM (continuous conduction mode) ICs
IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC065N06LS5 | N-Channel Power MOSFET
IQE006NE2LM5CG | N-Channel Power MOSFET
1EDN7511B | Gate driver ICs
BSZ22DN20NS3 G | N-Channel Power MOSFET
IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom.
The benefits of the already existing high voltage technology CoolSiC™ Schottky diode 650 V G6 is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Summary of Features
- Offers best-in-class VF and FOM Qc x VF
- Improved dv/dt ruggedness
- Easy and effective match with CoolMOS™ 7 SJ MOSFET families
- Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
- Reduced parasitic source inductance improves e iciency and ease-of-use
- Enables higher power density solutions
- Exceeding the highest quality standards
Benefits
- Enabling highest energy efficiency
- Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
- Reduced parasitic source inductance improves e iciency and ease-of-use
- Enables higher power density solutions
- Exceeding the highest quality standards
Potential Applications
- Telecom
- Server
- Solar
- PC power
- SMPS
Applications
- DIN rail power supplies
- Light electric vehicles (LEV)
- Telecommunication infrastructure
Designers who used this product also designed with
- 2EDS8165H |
Gate driver ICs
- ICE2PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IPL60R065C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC065N06LS5 |
N-Channel Power MOSFET
- IQE006NE2LM5CG |
N-Channel Power MOSFET
- 1EDN7511B |
Gate driver ICs
- BSZ22DN20NS3 G |
N-Channel Power MOSFET
- IPDD60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSZ070N08LS5 |
N-Channel Power MOSFET
- 1EDN7550B |
Gate driver ICs
- IPT60R016CM8 |
600 V CoolMOS™ 8
- IQD005N04NM6CG |
N-Channel Power MOSFET
- IPDD60R125G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPDD60R190G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPT60R022S7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IQE046N08LM5CGSC |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- SN7002W |
Small signal/small power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- 1EDB8275F |
Gate driver ICs
- 2EDS8165H |
Gate driver ICs
- ICE2PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IPL60R065C7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC065N06LS5 |
N-Channel Power MOSFET
- IQE006NE2LM5CG |
N-Channel Power MOSFET
- 1EDN7511B |
Gate driver ICs
- BSZ22DN20NS3 G |
N-Channel Power MOSFET
- IPDD60R050G7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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