Infineon Technologies AG Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER GATELEAD HIGH POWER

Description
Gate Leads suitable for Disc Type Devices Summary of Features Lead material: AWG20 KK, (HEW-FEP-Single Core (19x32)), leads twisted inside the sleeve Sleeve material: PTFE AWG6, d = 4,12mm
  • Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER - GATELEAD HIGH POWER - Infineon Technologies AG
    Infineon Technologies AG
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Description
Gate Leads suitable for Disc Type Devices Summary of Features Lead material: AWG20 KK, (HEW-FEP-Single Core (19x32)), leads twisted inside the sleeve Sleeve material: PTFE AWG6, d = 4,12mm
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER - GATELEAD HIGH POWER - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER
GATELEAD HIGH POWER
Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER GATELEAD HIGH POWER
Gate Leads suitable for Disc Type Devices Summary of Features Lead material: AWG20 KK, (HEW-FEP-Single Core (19x32)), leads twisted inside the sleeve Sleeve material: PTFE AWG6, d = 4,12mm

Gate Leads suitable for Disc Type Devices


Summary of Features

  • Lead material: AWG20 KK, (HEW-FEP-Single Core (19x32)), leads twisted inside the sleeve
  • Sleeve material: PTFE AWG6, d = 4,12mm
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Diodes
Product Number GATELEAD HIGH POWER
Product Name Power - Diode & Thyristor (Si/SiC) - Thyristor / Diode Discs - Accessories - GATELEAD HIGH POWER
RoHS Compliant RoHS
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