Infineon Technologies AG F-RAM (Ferroelectric RAM) FM25V10-GTR

Description
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM. Summary of Features 1-Mbit F-RAM logically organized as 128K × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Device ID and Serial Number Low power consumption Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Restriction of hazardous substances (RoHS) compliant Applications Automotive secondary power distribution unit Domestic robots Industrial automation Programmable logic controller (PLC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes 1 2 3
Request a Quote Datasheet
Description
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM. Summary of Features 1-Mbit F-RAM logically organized as 128K × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Device ID and Serial Number Low power consumption Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Restriction of hazardous substances (RoHS) compliant Applications Automotive secondary power distribution unit Domestic robots Industrial automation Programmable logic controller (PLC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
F-RAM (Ferroelectric RAM) - FM25V10-GTR - Infineon Technologies AG
Neubiberg, Germany
F-RAM (Ferroelectric RAM)
FM25V10-GTR
F-RAM (Ferroelectric RAM) FM25V10-GTR
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM. Summary of Features 1-Mbit F-RAM logically organized as 128K × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Device ID and Serial Number Low power consumption Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Restriction of hazardous substances (RoHS) compliant Applications Automotive secondary power distribution unit Domestic robots Industrial automation Programmable logic controller (PLC) Uninterruptible power supplies (UPS) Designers who used this product also designed with IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes 1 2 3

The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM.


Summary of Features

  • 1-Mbit F-RAM logically organized as 128K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Device ID and Serial Number
  • Low power consumption
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C
  • Restriction of hazardous substances (RoHS) compliant

Applications

  • Automotive secondary power distribution unit
  • Domestic robots
  • Industrial automation
  • Programmable logic controller (PLC)
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPD60R145CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL128SDPMFV000 |
    Quad SPI Flash
  • IPL65R195C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFIG11 |
    Quad SPI Flash
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • IKZA50N65SS5 |
    IGBT discretes
  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPD60R145CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL128SDPMFV000 |
    Quad SPI Flash
  • IPL65R195C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFIG11 |
    Quad SPI Flash
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes

1
2
3

Supplier's Site Datasheet
40MHZ Memory IC and Storage Component - 774-FM25V10-GTR - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
40MHZ Memory IC and Storage Component
774-FM25V10-GTR
40MHZ Memory IC and Storage Component 774-FM25V10-GTR
IC FRAM 1MBIT SPI 40MHZ 8SOIC Product overview: FM25V10-GTR from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 40MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM25V10-GTR can be used for catalog matching and distributor lookup.

IC FRAM 1MBIT SPI 40MHZ 8SOIC Product overview: FM25V10-GTR from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 40MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM25V10-GTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 448-FM25V10-GTRCT-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25V10-GTR-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25V10-GTRDKR-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
FRAM Memory - 2735331 - RS Components, Ltd.
Corby, Northants, United Kingdom
FRAM Memory
2735331
FRAM Memory 2735331
Infineon FM25V10-GTR

Infineon FM25V10-GTR

Supplier's Site
FRAM Memory - 2735330 - RS Components, Ltd.
Corby, Northants, United Kingdom
FRAM Memory
2735330
FRAM Memory 2735330
Infineon FM25V10-GTR

Infineon FM25V10-GTR

Supplier's Site
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 41AH7451 - Newark, An Avnet Company
Chicago, IL, United States
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies
41AH7451
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies 41AH7451
F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 49AC3738 - Newark, An Avnet Company
Chicago, IL, United States
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies
49AC3738
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies 49AC3738
F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

Supplier's Site Datasheet
IC FRAM 1MBIT SPI 40MHZ 8SOIC

IC FRAM 1MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet
IC FRAM 1MBIT SPI 40MHZ 8SOIC

IC FRAM 1MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet
Memory - FM25V10-GTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. Newark, An Avnet Company Lingto Electronic Limited ODG (Origin Data Global) Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM25V10-GTR 774-FM25V10-GTR 448-FM25V10-GTRCT-ND 2735331 41AH7451 FM25V10-GTR FM25V10-GTR FM25V10-GTR
Product Name F-RAM (Ferroelectric RAM) 40MHZ Memory IC and Storage Component Memory FRAM Memory F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies Memory Memory Memory
Memory Category FRAM FRAM NVRAM; FRAM FRAM Memory FRAM FRAM; FRAM (Ferroelectric RAM) FRAM; FRAM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 8000 kbits 8000 kbits 1000 kbits 1000 kbits 1000 kbits
Package Type PG-DSO-8 SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC SOIC; 8-SOIC (0.154", 3.90mm Width) SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 3.6V; 2 V, 3.6 V -3.3V; 2 2V ~ 3.6V 2V ~ 3.6V 3.6V; 2V ~ 3.6V
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