The FM25CL64B-GTR is a 64-Kbit (8K vó 8) ferroelectric random access memory (F-RAM) device that utilizes a serial peripheral interface (SPI) for communication. It operates at a frequency of up to 20 MHz and is designed for high endurance, capable of withstanding 100 trillion read/write cycles, significantly surpassing traditional EEPROM technologies. The device features immediate write capabilities with no write delays, allowing for efficient data handling in applications requiring frequent updates. Data retention is guaranteed for up to 151 years, making it suitable for long-term storage needs. The FM25CL64B-GTR operates within a voltage range of 2.7 V to 3.65 V and is rated for industrial temperature conditions from -40 ¬8C to +85 ¬8C. It is available in an 8-pin small outline integrated circuit (SOIC) package, and it complies with RoHS standards. The product includes a sophisticated write protection scheme, offering both hardware and software protection options. This combination of features positions the FM25CL64B-GTR as a reliable choice for nonvolatile memory applications in various industrial settings.
FM25CL64B-GTR is an advanced 64-Kbit nonvolatile memory, known for its exceptional reliability and high-performance attributes. With a remarkable data retention of 151 years, it surpasses traditional memories like serial flash and EEPROM by performing write operations at bus speed, eliminating delays, and offering substantial write endurance of 1014 cycles. This makes it ideal for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls. Trust in the FM25CL64B-GTR for efficient and reliable nonvolatile memory solutions.
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FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC
IC FRAM 64KBIT SPI 20MHZ 8SOIC Product overview: FM25CL64B-GTR from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 20MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM25CL64B-GTR can be used for catalog matching and distributor lookup.
IC FRAM 64KBIT SPI 20MHZ 8SOIC
FRAM (Ferroelectric RAM) Memory IC 64Kbit SPI 20 MHz 8-SOIC
IC FRAM 64KBIT SPI 20MHZ 8SOIC
NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins RoHS Compliant: Yes
NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins; RoHS Compliant: Yes
| Infineon Technologies AG | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | FM25CL64B-GTR | 448-FM25CL64B-GTRDKR-ND | 2735322 | 774-FM25CL64B-GTR | FM25CL64B-GTR | FM25CL64B-GTR | FM25CL64B-GTR | 41AH7446 |
| Product Name | Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR | Memory | FRAM Memory | 20MHZ Memory IC and Storage Component | Memory | Memory | Memory | Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies |
| Memory Category | FRAM | NVRAM; FRAM | FRAM Memory | FRAM | FRAM | FRAM; FRAM | FRAM; FRAM (Ferroelectric RAM) | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 64 kbits | 512 kbits | 64 kbits | 64 kbits | 64 kbits | 64 kbits | 64 kbits | |
| Package Type | PG-DSO-8 | SOIC; "8-SOIC (0.154"", 3.90mm Width)" | SOIC; SOIC | SOIC; 8-SOIC (0.154\", 3.90mm Width) | SOIC; 8-SOIC (0.154", 3.90mm Width) | SOIC | ||
| Supply Voltage | 2.7V; 2.7 V, 3.65 V | 2.7V ~ 3.65V | -3.3V; 2.7 | 2.7V ~ 3.65V | 2.7V ~ 3.65V |
