Infineon Technologies AG Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR FM25CL64B-GTR

Description
FM25CL64B-GTR is an advanced 64-Kbit nonvolatile memory, known for its exceptional reliability and high-performance attributes. With a remarkable data retention of 151 years, it surpasses traditional memories like serial flash and EEPROM by performing write operations at bus speed, eliminating delays, and offering substantial write endurance of 1014 cycles. This makes it ideal for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls. Trust in the FM25CL64B-GTR for efficient and reliable nonvolatile memory solutions. Summary of Features 64-Kbit F-RAM logically organized as 8K × 8 High-endurance 100 trillion (1014) read/writes NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Low-voltage operation Benefits Hardware drop-in replacement High-speed SPI bus Industrial temperature range: –40°C to +85°C Applications Electric vehicle (EV) drivetrain system Industrial automation Designers who used this product also designed with TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes 1 2 3
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Description
FM25CL64B-GTR is an advanced 64-Kbit nonvolatile memory, known for its exceptional reliability and high-performance attributes. With a remarkable data retention of 151 years, it surpasses traditional memories like serial flash and EEPROM by performing write operations at bus speed, eliminating delays, and offering substantial write endurance of 1014 cycles. This makes it ideal for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls. Trust in the FM25CL64B-GTR for efficient and reliable nonvolatile memory solutions. Summary of Features 64-Kbit F-RAM logically organized as 8K × 8 High-endurance 100 trillion (1014) read/writes NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Low-voltage operation Benefits Hardware drop-in replacement High-speed SPI bus Industrial temperature range: –40°C to +85°C Applications Electric vehicle (EV) drivetrain system Industrial automation Designers who used this product also designed with TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes 1 2 3
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Datasheet
Datasheet Summary
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The FM25CL64B-GTR is a 64-Kbit (8K vó 8) ferroelectric random access memory (F-RAM) device that utilizes a serial peripheral interface (SPI) for communication. It operates at a frequency of up to 20 MHz and is designed for high endurance, capable of withstanding 100 trillion read/write cycles, significantly surpassing traditional EEPROM technologies. The device features immediate write capabilities with no write delays, allowing for efficient data handling in applications requiring frequent updates. Data retention is guaranteed for up to 151 years, making it suitable for long-term storage needs. The FM25CL64B-GTR operates within a voltage range of 2.7 V to 3.65 V and is rated for industrial temperature conditions from -40 ¬8C to +85 ¬8C. It is available in an 8-pin small outline integrated circuit (SOIC) package, and it complies with RoHS standards. The product includes a sophisticated write protection scheme, offering both hardware and software protection options. This combination of features positions the FM25CL64B-GTR as a reliable choice for nonvolatile memory applications in various industrial settings.

Datasheet Summary
Powered by GS/AI

The FM25CL64B-GTR is a 64-Kbit (8K vó 8) ferroelectric random access memory (F-RAM) device that utilizes a serial peripheral interface (SPI) for communication. It operates at a frequency of up to 20 MHz and is designed for high endurance, capable of withstanding 100 trillion read/write cycles, significantly surpassing traditional EEPROM technologies. The device features immediate write capabilities with no write delays, allowing for efficient data handling in applications requiring frequent updates. Data retention is guaranteed for up to 151 years, making it suitable for long-term storage needs. The FM25CL64B-GTR operates within a voltage range of 2.7 V to 3.65 V and is rated for industrial temperature conditions from -40 ¬8C to +85 ¬8C. It is available in an 8-pin small outline integrated circuit (SOIC) package, and it complies with RoHS standards. The product includes a sophisticated write protection scheme, offering both hardware and software protection options. This combination of features positions the FM25CL64B-GTR as a reliable choice for nonvolatile memory applications in various industrial settings.

Suppliers

Company
Product
Description
Supplier Links
Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR - FM25CL64B-GTR - Infineon Technologies AG
Neubiberg, Germany
Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR
FM25CL64B-GTR
Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR FM25CL64B-GTR
FM25CL64B-GTR is an advanced 64-Kbit nonvolatile memory, known for its exceptional reliability and high-performance attributes. With a remarkable data retention of 151 years, it surpasses traditional memories like serial flash and EEPROM by performing write operations at bus speed, eliminating delays, and offering substantial write endurance of 1014 cycles. This makes it ideal for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls. Trust in the FM25CL64B-GTR for efficient and reliable nonvolatile memory solutions. Summary of Features 64-Kbit F-RAM logically organized as 8K × 8 High-endurance 100 trillion (1014) read/writes NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Low power consumption Low-voltage operation Benefits Hardware drop-in replacement High-speed SPI bus Industrial temperature range: –40°C to +85°C Applications Electric vehicle (EV) drivetrain system Industrial automation Designers who used this product also designed with TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes SAK-TC275TC-64F200N DC | AURIX™ Family – TC27xT TLF35584QVVS1 | OPTIREG™ PMIC ISS17EP06LM | P-Channel Power MOSFET ISP752T | PROFET™ Industrial | Smart high-side switch IRLHS6376 | N-Channel Power MOSFET BSS83P | Small signal/small power MOSFET BSL606SN | Small signal/small power MOSFET 2N7002DW | Small signal/small power MOSFET AIKQ120N75CP2 | Automotive IGBT discretes 1 2 3

FM25CL64B-GTR is an advanced 64-Kbit nonvolatile memory, known for its exceptional reliability and high-performance attributes. With a remarkable data retention of 151 years, it surpasses traditional memories like serial flash and EEPROM by performing write operations at bus speed, eliminating delays, and offering substantial write endurance of 1014 cycles. This makes it ideal for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls. Trust in the FM25CL64B-GTR for efficient and reliable nonvolatile memory solutions.


Summary of Features

  • 64-Kbit F-RAM logically organized as 8K × 8
  • High-endurance 100 trillion (1014) read/writes
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Low power consumption
  • Low-voltage operation

Benefits

  • Hardware drop-in replacement
  • High-speed SPI bus
  • Industrial temperature range: –40°C to +85°C

Applications

  • Electric vehicle (EV) drivetrain system
  • Industrial automation

Designers who used this product also designed with


  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • ISS17EP06LM |
    P-Channel Power MOSFET
  • ISP752T |
    PROFET™ Industrial | Smart high-side switch
  • IRLHS6376 |
    N-Channel Power MOSFET
  • BSS83P |
    Small signal/small power MOSFET
  • BSL606SN |
    Small signal/small power MOSFET
  • 2N7002DW |
    Small signal/small power MOSFET
  • AIKQ120N75CP2 |
    Automotive IGBT discretes
  • SAK-TC275TC-64F200N DC |
    AURIX™ Family – TC27xT
  • TLF35584QVVS1 |
    OPTIREG™ PMIC
  • ISS17EP06LM |
    P-Channel Power MOSFET
  • ISP752T |
    PROFET™ Industrial | Smart high-side switch
  • IRLHS6376 |
    N-Channel Power MOSFET
  • BSS83P |
    Small signal/small power MOSFET
  • BSL606SN |
    Small signal/small power MOSFET
  • 2N7002DW |
    Small signal/small power MOSFET
  • AIKQ120N75CP2 |
    Automotive IGBT discretes

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Supplier's Site Datasheet
Singapore, Singapore
20MHZ Memory IC and Storage Component
774-FM25CL64B-GTR
20MHZ Memory IC and Storage Component 774-FM25CL64B-GTR
IC FRAM 64KBIT SPI 20MHZ 8SOIC Product overview: FM25CL64B-GTR from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 20MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM25CL64B-GTR can be used for catalog matching and distributor lookup.

IC FRAM 64KBIT SPI 20MHZ 8SOIC Product overview: FM25CL64B-GTR from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20MHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 20MHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-FM25CL64B-GTR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 448-FM25CL64B-GTRDKR-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25CL64B-GTR-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25CL64B-GTRCT-ND - DigiKey
Thief River Falls, MN, United States
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) SPI 20MHz 8-SOIC

Buy Now Datasheet
FRAM Memory - 2735322 - RS Components, Ltd.
Corby, Northants, United Kingdom
FRAM Memory
2735322
FRAM Memory 2735322
Infineon FM25CL64B-GTR

Infineon FM25CL64B-GTR

Supplier's Site
FRAM Memory - 2735323 - RS Components, Ltd.
Corby, Northants, United Kingdom
FRAM Memory
2735323
FRAM Memory 2735323
Infineon FM25CL64B-GTR

Infineon FM25CL64B-GTR

Supplier's Site
Memory - FM25CL64B-GTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FRAM (Ferroelectric RAM) Memory IC 64Kbit SPI 20 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 64Kbit SPI 20 MHz 8-SOIC

Buy Now Datasheet
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies - 41AH7446 - Newark, An Avnet Company
Chicago, IL, United States
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies
41AH7446
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies 41AH7446
NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins RoHS Compliant: Yes

NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies - 16AC3251 - Newark, An Avnet Company
Chicago, IL, United States
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies
16AC3251
Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies 16AC3251
NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins; RoHS Compliant: Yes

NON-VOL MEMORY, 64KBIT, 20MHZ, SOIC-8; Memory Size:64Kbit; Memory Organisation:8K x 8bit; IC Interface Type:SPI; Clock Frequency:20MHz; Supply Voltage Min:2.7V; Supply Voltage Max:3.65V; Memory Case Style:SOIC; No. of Pins:8Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
IC FRAM 64KBIT SPI 20MHZ 8SOIC

IC FRAM 64KBIT SPI 20MHZ 8SOIC

Supplier's Site Datasheet
IC FRAM 64KBIT SPI 20MHZ 8SOIC

IC FRAM 64KBIT SPI 20MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. DigiKey RS Components, Ltd. Quarktwin Technology Ltd. Newark, An Avnet Company ODG (Origin Data Global) Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM25CL64B-GTR 774-FM25CL64B-GTR 448-FM25CL64B-GTRDKR-ND 2735322 FM25CL64B-GTR 41AH7446 FM25CL64B-GTR FM25CL64B-GTR
Product Name Memories - F-RAM (Ferroelectric RAM) - FM25CL64B-GTR 20MHZ Memory IC and Storage Component Memory FRAM Memory Memory Non-Vol Memory, 64Kbit, 20Mhz, Soic-8; Memory Size Cypress Infineon Technologies Memory Memory
Memory Category FRAM FRAM NVRAM; FRAM FRAM Memory FRAM; FRAM FRAM; FRAM (Ferroelectric RAM) FRAM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64 kbits 64 kbits 512 kbits 64 kbits 64 kbits 64 kbits 64 kbits
Package Type PG-DSO-8 SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC; SOIC SOIC; 8-SOIC (0.154\", 3.90mm Width) SOIC SOIC; 8-SOIC (0.154", 3.90mm Width)
Supply Voltage 2.7V; 2.7 V, 3.65 V -3.3V; 2.7 2.7V ~ 3.65V 2.7V ~ 3.65V 2.7V ~ 3.65V
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