Low Clamping Voltage, Low Capacitance, Bi Directional ESD/ Transient Protection Diode (TVS: transient voltage suppressor)
Bi-directional, 18 V, 0.2 pF, 01005, RoHS and Halogen Free compliant
Summary of Features
ESD / transient protection according to:
- IEC61000-4-2 (ESD): ±18 kV (air / contact discharge)
- IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns)
- IEC61000-4-5 (Surge): ±3.5 A (8/20 μs)
Bi-directional working voltage up to: VRWM = ±18 V
Line capacitance: CL = 0.2 pF (typical) at f = 1 MHz
Clamping voltage: VCL = 12.5 V (typical) at ITLP = 16 A with RDYN = 0.58 Ω (typical)
Very low reverse current: IR < 1 nA (typical)
Small form factor SMD size 01005 and low profile (0.43 x 0.23 x 0.15 mm³)
Bi-directional and symmetric I/V characteristics for optimized design / assembly
Potential Applications
ESD protection of RF signal lines in Near Field Communication (NFC) applications, RF antenna
Low Clamping Voltage, Low Capacitance, Bi Directional ESD/ Transient Protection Diode (TVS: transient voltage suppressor)
Bi-directional, 18 V, 0.2 pF, 01005, RoHS and Halogen Free compliant
Summary of Features
- ESD / transient protection according to:
- IEC61000-4-2 (ESD): ±18 kV (air / contact discharge)
- IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns)
- IEC61000-4-5 (Surge): ±3.5 A (8/20 μs)
- Bi-directional working voltage up to: VRWM = ±18 V
- Line capacitance: CL = 0.2 pF (typical) at f = 1 MHz
- Clamping voltage: VCL = 12.5 V (typical) at ITLP = 16 A with RDYN = 0.58 Ω (typical)
- Very low reverse current: IR < 1 nA (typical)
- Small form factor SMD size 01005 and low profile (0.43 x 0.23 x 0.15 mm³)
- Bi-directional and symmetric I/V characteristics for optimized design / assembly
Potential Applications
ESD protection of RF signal lines in Near Field Communication (NFC) applications, RF antenna
