Infineon Technologies AG Memory CYDM128B08-40BVXI

Description
IC SRAM 128KBIT PAR 100VFBGA
Datasheet
Description
IC SRAM 128KBIT PAR 100VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 128KBIT PAR 100VFBGA

IC SRAM 128KBIT PAR 100VFBGA

Supplier's Site Datasheet
Memory - CYDM128B08-40BVXI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, MoBL Memory IC 128Kbit Parallel 40 ns 100-VFBGA (6x6)

SRAM - Dual Port, MoBL Memory IC 128Kbit Parallel 40 ns 100-VFBGA (6x6)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CYDM128B08-40BVXI CYDM128B08-40BVXI
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 40 ns 40 ns
Density 128 kbits 128 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V124SA10TY - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1000 kbits
View Details
 - JM38510/23106BEA - Rochester Electronics
Specs
Memory Category SRAM Chip
View Details
3 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821601VXC - 5962R1821601VXC - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2000 kbits
Package Type CG-SSOP-16
View Details
Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details