Infineon Technologies AG Integrated Circuits (ICs) - Memory - Memory CY7S1049G30-10VXIT

Description
Win Source Part Number: 1347961-CY7S1049G30- 10VXIT Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Standard Package: 500 Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mbit Access Time: 10 ns Voltage - Supply: 2.2V ~ 3.6V Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Infineon Technologies Base Product Number: CY7S1049 Memory Organization: 512K x 8
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Description
Win Source Part Number: 1347961-CY7S1049G30- 10VXIT Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Standard Package: 500 Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mbit Access Time: 10 ns Voltage - Supply: 2.2V ~ 3.6V Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Infineon Technologies Base Product Number: CY7S1049 Memory Organization: 512K x 8
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Datasheet
Datasheet Summary
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The CY7S1049G30-10VXIT is a 4-Mbit (512K words vó 8-bit) asynchronous static RAM (SRAM) from Win Source Electronics, designed for high-performance applications. It features a fast access time of 10 ns and operates within a voltage range of 2.2V to 3.6V. The device is optimized for low power consumption, with a typical active current of 38 mA and a standby current of 6 mA. It also includes a Deep-Sleep mode that reduces current to as low as 15 µA, making it suitable for battery-powered applications. The memory incorporates embedded Error Correcting Code (ECC) for single-bit error correction, enhancing data integrity. The CY7S1049G30-10VXIT is available in a 36-pin molded SOJ package and is rated for an operating temperature range of -40°C to 85°C. This SRAM is ideal for applications requiring reliable, high-speed memory with low power consumption.

Datasheet Summary
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The CY7S1049G30-10VXIT is a 4-Mbit (512K words vó 8-bit) asynchronous static RAM (SRAM) from Win Source Electronics, designed for high-performance applications. It features a fast access time of 10 ns and operates within a voltage range of 2.2V to 3.6V. The device is optimized for low power consumption, with a typical active current of 38 mA and a standby current of 6 mA. It also includes a Deep-Sleep mode that reduces current to as low as 15 µA, making it suitable for battery-powered applications. The memory incorporates embedded Error Correcting Code (ECC) for single-bit error correction, enhancing data integrity. The CY7S1049G30-10VXIT is available in a 36-pin molded SOJ package and is rated for an operating temperature range of -40°C to 85°C. This SRAM is ideal for applications requiring reliable, high-speed memory with low power consumption.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - 1347961-CY7S1049G30-10VXIT - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1347961-CY7S1049G30-10VXIT
Integrated Circuits (ICs) - Memory - Memory 1347961-CY7S1049G30-10VXIT
Win Source Part Number: 1347961-CY7S1049G30- 10VXIT Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Standard Package: 500 Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 4Mbit Access Time: 10 ns Voltage - Supply: 2.2V ~ 3.6V Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0041 Mfr: Infineon Technologies Base Product Number: CY7S1049 Memory Organization: 512K x 8

Win Source Part Number: 1347961-CY7S1049G30-10VXIT
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Standard Package: 500
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 4Mbit
Access Time: 10 ns
Voltage - Supply: 2.2V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 36 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041
Mfr: Infineon Technologies
Base Product Number: CY7S1049
Memory Organization: 512K x 8

Buy Now Datasheet
Memory IC and Storage Component - 774-CY7S1049G30-10VXIT - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-CY7S1049G30-10VXIT
Memory IC and Storage Component 774-CY7S1049G30-10VXIT
IC SRAM 4MBIT PARALLEL 36SOJ Product overview: CY7S1049G30-10VXIT from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CY7S1049G30-10VX IT can be used for catalog matching and distributor lookup.

IC SRAM 4MBIT PARALLEL 36SOJ Product overview: CY7S1049G30-10VXIT from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CY7S1049G30-10VXIT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 448-CY7S1049G30-10VXITTR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

Buy Now Datasheet
Memory - CY7S1049G30-10VXIT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1347961-CY7S1049G30-10VXIT 774-CY7S1049G30-10VXIT 448-CY7S1049G30-10VXITTR-ND CY7S1049G30-10VXIT CY7S1049G30-10VXIT
Product Name Integrated Circuits (ICs) - Memory - Memory Memory IC and Storage Component Memory Memory Memory
Memory Category Volatile; SRAM Chip SRAM Chip SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns 10 ns 10 ns
Cycle Time 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 2.2V ~ 3.6V -3.3V; 2.2 2.2V ~ 3.6V 3.6V; 2.2V ~ 3.6V
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