Infineon Technologies AG Memory CY7C4041KV13-600FCXC

The CY7C4041KV13-600FCXC is a 72-Mbit QDR,Ñ¢-IV HP SRAM memory device designed for high-performance applications. It features a dual independent bi-directional data port architecture, allowing for concurrent read and write operations, which maximizes random transaction rates. The device operates at a maximum frequency of 600 MHz and supports a total random transaction rate of 1334 MT/s. This SRAM has a bus width configuration of 2M vó 36 and utilizes double data rate (DDR) signaling for data ports, while control signals operate at single data rate (SDR). It includes on-chip error correction code (ECC) to detect and correct single-bit memory errors, significantly improving the soft error rate to less than 0.01 FITs/Mb. The device is packaged in a 361-ball FCBGA format and operates at a core voltage of 1.3 V, making it suitable for applications requiring high-speed memory with robust error correction capabilities.