Infineon Technologies AG Memory CY7C1356C-166BGC

Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 166MHz 3.5ns 119-PBGA (14x22)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 166MHz 3.5ns 119-PBGA (14x22)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY7C1356C-166BGC-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 166MHz 3.5ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 166MHz 3.5ns 119-PBGA (14x22)

Buy Now Datasheet
Memory - CY7C1356C-166BGC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CY7C1356C-166BGC-ND CY7C1356C-166BGC
Product Name Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 9000 kbits 9000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
 - 54S288AJ/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP
View Details
4 suppliers
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2229DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details