Infineon Technologies AG Memory CY7C1061G30-10BVJXIT

Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-VFBGA (6x8)
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-VFBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-CY7C1061G30-10BVJXITTR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-VFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-VFBGA (6x8)

Buy Now Datasheet
IC SRAM 16MBIT PARALLEL 48VFBGA

IC SRAM 16MBIT PARALLEL 48VFBGA

Supplier's Site Datasheet
Memory - CY7C1061G30-10BVJXIT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)

SRAM - Asynchronous Memory IC 16Mbit Parallel 10 ns 48-VFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 448-CY7C1061G30-10BVJXITTR-ND CY7C1061G30-10BVJXIT CY7C1061G30-10BVJXIT
Product Name Memory Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 8 611 200 744 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 27C256-20/P229 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 200 ns
Density 256 kbits
View Details
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - SN74ACT7202LA35RJ - Rochester Electronics
Specs
Memory Category FIFO
Package Type PLCC; PLCC32
View Details
2 suppliers