The CY15E064J-SXE is a 64-Kbit (8K vó 8) nonvolatile memory device utilizing ferroelectric RAM (F-RAM) technology. It features a fast two-wire I²C interface with a maximum frequency of 1 MHz, making it suitable for applications requiring rapid data access. The device supports up to 10^14 read/write cycles, significantly exceeding the endurance of traditional EEPROM, and offers 151 years of data retention. Write operations are performed without delays, allowing immediate data availability after each byte transfer. The CY15E064J-SXE operates within an automotive temperature range of -40 °C to +85 °C and consumes low power, with typical active current of 100 µA at 100 kHz and standby current of 4 µA. It is available in an 8-pin small outline integrated circuit (SOIC) package and is compliant with RoHS standards, making it a reliable choice for automotive and industrial applications where frequent writes are necessary.
CY15E064J - F-RAM Memory Serial
FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) I²C 3.4MHz 8-SOIC
FRAM (Ferroelectric RAM) Memory IC 64Kbit I²C 3.4 MHz 8-SOIC
IC FRAM 64KBIT I2C 3.4MHZ 8SOIC
| Rochester Electronics | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | CY15E064J-SXE | 448-CY15E064J-SXE-ND | CY15E064J-SXE | CY15E064J-SXE |
| Product Name | Memory | Memory | Memory | |
| Package Type | PG-DSO-8 | SOIC; "8-SOIC (0.154"", 3.90mm Width)" | SOIC; 8-SOIC (0.154\", 3.90mm Width) |