The CY14B108N-BA45XI is an 8-Mbit non-volatile SRAM (nvSRAM) memory device from Quarktwin Technology Ltd., organized as 512 K words of 16 bits each. It features access times of 45 ns and operates on a single supply voltage of 3 V with a tolerance of +20% to -10%. The device incorporates QuantumTrap technology, allowing for hands-off automatic data storage during power-down and data recall upon power-up. It supports infinite read and write cycles and offers a data retention period of 20 years with 1 million STORE cycles to the non-volatile elements. The CY14B108N-BA45XI is available in a 48-ball fine-pitch ball grid array (FBGA) package and is compliant with RoHS standards. This product is suitable for applications requiring reliable non-volatile memory with fast access times and robust data retention capabilities.
NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (512K x 16) Parallel 45ns 48-FBGA (6x10)
IC NVSRAM 8MBIT PARALLEL 48FBGA Product overview: CY14B108N-BA45XI from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-CY14B108N-BA45XI
NVSRAM (Non-Volatile SRAM) Memory IC 8Mbit Parallel 45 ns 48-FBGA (6x10)
IC NVSRAM 8MBIT PARALLEL 48FBGA
IC NVSRAM 8MBIT PARALLEL 48FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | CY14B108N-BA45XI-ND | 774-CY14B108N-BA45XI | CY14B108N-BA45XI | CY14B108N-BA45XI | CY14B108N-BA45XI |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory | Memory |
| Memory Category | NVRAM; NVSRAM | NVRAM; NVSRAM; SRAM Chip | NVSRAM; NVSRAM; SRAM Chip | NVSRAM; SRAM Chip | NVSRAM (Non-Volatile SRAM); SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits | 8000 kbits |
| Package Type | 48-TFBGA | BGA; 48-TFBGA | 48-TFBGA | ||
| Supply Voltage | 2.7V ~ 3.6V | 2.7 | 3.6V; 2.7V ~ 3.6V | 2.7V ~ 3.6V |
