Infineon Technologies AG Memory CY14B104N-BA25XI

Description
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 25ns 48-FBGA (6x10)
Request a Quote Datasheet
Description
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 25ns 48-FBGA (6x10)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CY14B104N-BA25XI-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 25ns 48-FBGA (6x10)

NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 16) Parallel 25ns 48-FBGA (6x10)

Buy Now Datasheet
Memory - CY14B104N-BA25XI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)

NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)

Buy Now Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CY14B104N-BA25XI-ND CY14B104N-BA25XI
Product Name Memory Memory
Memory Category NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits
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