Infineon Technologies AG Memory CY14B101Q2A-SXIT

Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC
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Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The CY14B101Q2A-SXIT is a 1-Mbit (128K x 8) non-volatile static random access memory (nvSRAM) from Quarktwin Technology Ltd., featuring a serial SPI interface. It operates within a voltage range of 2.7 V to 3.6 V and is housed in an 8-pin SOIC package. This memory device utilizes QuantumTrap technology, which ensures high reliability and allows for infinite read and write cycles. The device supports automatic data storage to non-volatile elements during power-down (AutoStore) and can also initiate STORE and RECALL operations via SPI commands. The memory is designed for industrial applications, with a data retention period of 20 years at 85 ¬8C and an endurance of 1 million STORE cycles. It operates at clock rates of up to 40 MHz for standard operations and 104 MHz for fast read/write operations, making it suitable for high-speed applications. The device is RoHS compliant and offers low power consumption, with an average active current of 3 mA and standby current of 150 ¬µA.

Datasheet Summary
Powered by GS/AI

The CY14B101Q2A-SXIT is a 1-Mbit (128K x 8) non-volatile static random access memory (nvSRAM) from Quarktwin Technology Ltd., featuring a serial SPI interface. It operates within a voltage range of 2.7 V to 3.6 V and is housed in an 8-pin SOIC package. This memory device utilizes QuantumTrap technology, which ensures high reliability and allows for infinite read and write cycles. The device supports automatic data storage to non-volatile elements during power-down (AutoStore) and can also initiate STORE and RECALL operations via SPI commands. The memory is designed for industrial applications, with a data retention period of 20 years at 85 ¬8C and an endurance of 1 million STORE cycles. It operates at clock rates of up to 40 MHz for standard operations and 104 MHz for fast read/write operations, making it suitable for high-speed applications. The device is RoHS compliant and offers low power consumption, with an average active current of 3 mA and standby current of 150 ¬µA.

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-CY14B101Q2A-SXITTR-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Memory - CY14B101Q2A-SXIT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

Buy Now Datasheet
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC

IC NVSRAM 1MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC

IC NVSRAM 1MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited ODG (Origin Data Global)
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 448-CY14B101Q2A-SXITTR-ND CY14B101Q2A-SXIT CY14B101Q2A-SXIT CY14B101Q2A-SXIT
Product Name Memory Memory Memory Memory
Memory Category NVRAM; NVSRAM NVSRAM; NVSRAM; SRAM Chip NVSRAM; SRAM Chip NVSRAM (Non-Volatile SRAM); SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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