Infineon Technologies AG RF - Low Noise Amplifier LNA ICs - Multi-purpose LNAs - BGA7H1BN6 BGA7H1BN6

BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc Summary of Features Insertion power gain: 12.3 dB Low noise figure: 0.85 dB Low current consumption: 4.3 mA Insertion loss in bypass mode: -3.1 dB Operating frequencies: 1805 - 2690 MHz Two-state control: Bypass- and high gain-mode Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary Pb-free (RoHS compliant) package Potential Applications LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules. Applications Convenient, smart, and secure wearables supporting your health and well-being. Mobile devices and smartphones Designers who used this product also designed with BGS13SN8 | RF Switches BGS16MA12 | RF Switches BGS12WN6 | RF Switches OPTIGA TRUST B SLE 95250 | OPTIGA™ Trust BGS13SN8 | RF Switches BGS16MA12 | RF Switches BGS12WN6 | RF Switches OPTIGA TRUST B SLE 95250 | OPTIGA™ Trust BGS13SN8 | RF Switches BGS16MA12 | RF Switches BGS12WN6 | RF Switches OPTIGA TRUST B SLE 95250 | OPTIGA™ Trust