- Trained on our vast library of engineering resources.

Infineon Technologies AG Low Noise RF Transistors BFP640F

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low Noise RF Transistors - BFP640F - Infineon Technologies AG
Neubiberg, Germany
Low Noise RF Transistors
BFP640F
Low Noise RF Transistors BFP640F
NPN Silicon Germanium RF Transistor Summary of Features High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz High maximum stable gain:Gms = 23 dB at 1.8 GHz Gold metallization for extra high reliability 70 GHz fT-Silicon Germanium technology Pb-free (RoHS compliant) package

NPN Silicon Germanium RF Transistor


Summary of Features

  • High gain low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
  • High maximum stable gain:Gms = 23 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 70 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP640F
Product Name Low Noise RF Transistors
Package Type TSFP-4-1
Unlock Full Specs
to access all available technical data

Similar Products

Small Signal/Small Power MOSFET - 2N7002DW - Infineon Technologies AG
Specs
Polarity N+N
Transistor Technology / Material Si/SiC
rDS(on) 3 ohms
View Details
P-Channel Power MOSFET - BSO613SPV-G - Infineon Technologies AG
Specs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
View Details
N-Channel Power MOSFET - BSC040N10NS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0040 ohms
View Details
4 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H - AIMDQ75R027M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details