Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR22PNH6327XTSA1 BCR22PNH6327XTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 113823-BCR22PNH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 50 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 113823-BCR22PNH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 50 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR22PNH6327XTSA1 - 113823-BCR22PNH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR22PNH6327XTSA1
113823-BCR22PNH6327XTSA1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR22PNH6327XTSA1 113823-BCR22PNH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 113823-BCR22PNH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 50 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 113823-BCR22PNH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 50 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 113823-BCR22PNH6327XTSA1
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR22PNH6327XTSA1
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