Infineon Technologies AG MOSFET AUIRFS8409

Description
Infineons Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature. Channel Type = N Maximum Continuous Drain Current = 195 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.2 mOhms Maximum Gate Threshold Voltage = 3.9V Minimum Gate Threshold Voltage = 2.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.
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Suppliers

Company
Product
Description
Supplier Links
 - 7871014P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature. Channel Type = N Maximum Continuous Drain Current = 195 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.2 mOhms Maximum Gate Threshold Voltage = 3.9V Minimum Gate Threshold Voltage = 2.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 7871014 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature. Channel Type = N Maximum Continuous Drain Current = 195 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.2 mOhms Maximum Gate Threshold Voltage = 3.9V Minimum Gate Threshold Voltage = 2.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
 - 1459648 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature. Channel Type = N Maximum Continuous Drain Current = 195 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.2 mOhms Maximum Gate Threshold Voltage = 3.9V Minimum Gate Threshold Voltage = 2.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Transistor Configuration = Single

Infineons Automotive-qualified COOLiRFETâ„¢ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
Channel Type = N
Maximum Continuous Drain Current = 195 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.2 mOhms
Maximum Gate Threshold Voltage = 3.9V
Minimum Gate Threshold Voltage = 2.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
 - AUIRFS8409 - Rochester Electronics
Newburyport, MA, United States
AUIRFS8409 - 20V-40V N-Channel Automotive MOSFET

AUIRFS8409 - 20V-40V N-Channel Automotive MOSFET

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Auto 40V N-Ch FET 0.97mOhm 195A

MOSFET Auto 40V N-Ch FET 0.97mOhm 195A

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS8409 - 1149874-AUIRFS8409 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS8409
1149874-AUIRFS8409
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS8409 1149874-AUIRFS8409
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1149874-AUIRFS8409 Manufacturer Homepage: www.irf.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149874-AUIRFS8409
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRFS8409 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRFS8409
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRFS8409
MOSFET N-CH 40V 195A D2PAK

MOSFET N-CH 40V 195A D2PAK

Supplier's Site
Single FETs, MOSFETs - IRAUIRFS8409-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRAUIRFS8409-ND
Single FETs, MOSFETs IRAUIRFS8409-ND
N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-3

N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Discrete Semiconductor - AUIRFS8409 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
AUIRFS8409
Discrete Semiconductor AUIRFS8409
MOSFET N-CH 40V 195A D2PAK

MOSFET N-CH 40V 195A D2PAK

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Rochester Electronics VAST STOCK CO., LIMITED Win Source Electronics Shenzhen Shengyu Electronics Technology Limited DigiKey LIXINC Electronics Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Transistors RF MOSFET Transistors
Product Number 7871014P AUIRFS8409 AUIRFS8409 1149874-AUIRFS8409 AUIRFS8409 IRAUIRFS8409-ND AUIRFS8409
Product Name MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS8409 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 40 volts
rDS(on) 0.0012 ohms
Package Type D2PAK (TO-263) D2PAK SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D虏Pak (2 Leads + Tab), TO-263AB
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