Infineon Technologies AG CoolSiC™ Schottky Diodes AIDK12S65C5

Description
The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristi cs and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class. Summary of Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Junction Temperature range from -40°C to 175°C System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Potential Applications Traction inverter Booster / DCDC Converter On board Charger / PFC Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC BSS84P | Small signal/small power MOSFET IAUT300N08S5N011 | Automotive MOSFET AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP IAUC41N06S5L100 | Automotive MOSFET BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2 3 4
Request a Quote Datasheet
Description
The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristi cs and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class. Summary of Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Junction Temperature range from -40°C to 175°C System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Potential Applications Traction inverter Booster / DCDC Converter On board Charger / PFC Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC BSS84P | Small signal/small power MOSFET IAUT300N08S5N011 | Automotive MOSFET AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP IAUC41N06S5L100 | Automotive MOSFET BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - AIDK12S65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
AIDK12S65C5
CoolSiC™ Schottky Diodes AIDK12S65C5
The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristi cs and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class. Summary of Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Junction Temperature range from -40°C to 175°C System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Potential Applications Traction inverter Booster / DCDC Converter On board Charger / PFC Applications On-board charging (OBC) for electric vehicles Designers who used this product also designed with BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC BSS84P | Small signal/small power MOSFET IAUT300N08S5N011 | Automotive MOSFET AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP IAUC41N06S5L100 | Automotive MOSFET BSL215C | Dual MOSFET AIGBE40N65F5 | Automotive IGBT discretes AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes AIMCQ120R060M1T Silicon Carbide MOSFET Discretes BAS52-02V | Schottky Diodes IPBE65R115CFD7A | Automotive MOSFET BSS159N | N-Channel Depletion Mode MOSFET TLE9471-3ES V33 | OPTIREG™ Lite SBC 1 2 3 4

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.


Summary of Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Junction Temperature range from -40°C to 175°C
  • System efficiency improvement over Si diodes
  • System cost / size savings due to reduced cooling requirements
  • Enabling higher frequency / increased power density solutions
  • Higher system reliability due to lower operating temperatures
  • Reduced EMI

Potential Applications

  • Traction inverter
  • Booster / DCDC Converter
  • On board Charger / PFC

Applications

  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • BSL215C |
    Dual MOSFET
  • AIGBE40N65F5 |
    Automotive IGBT discretes
  • AIMDQ75R040M1H |
    Silicon Carbide MOSFET Discretes
  • AIMCQ120R060M1T
    Silicon Carbide MOSFET Discretes
  • BAS52-02V |
    Schottky Diodes
  • IPBE65R115CFD7A |
    Automotive MOSFET
  • BSS159N |
    N-Channel Depletion Mode MOSFET
  • TLE9471-3ES V33 |
    OPTIREG™ Lite SBC
  • BSS84P |
    Small signal/small power MOSFET
  • IAUT300N08S5N011 |
    Automotive MOSFET
  • AIMCQ120R080M1T |
    Silicon Carbide MOSFET Discretes
  • SAK-TC365DP-64F300W AA |
    AURIX™ Family – TC36xDP
  • IAUC41N06S5L100 |
    Automotive MOSFET
  • BSL215C |
    Dual MOSFET
  • AIGBE40N65F5 |
    Automotive IGBT discretes
  • AIMDQ75R040M1H |
    Silicon Carbide MOSFET Discretes
  • AIMCQ120R060M1T
    Silicon Carbide MOSFET Discretes
  • BAS52-02V |
    Schottky Diodes
  • IPBE65R115CFD7A |
    Automotive MOSFET
  • BSS159N |
    N-Channel Depletion Mode MOSFET
  • TLE9471-3ES V33 |
    OPTIREG™ Lite SBC

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Supplier's Site Datasheet
650V Independent Type 1.5V@12A 12A TO-263-2 SiC Diodes ROHS

650V Independent Type 1.5V@12A 12A TO-263-2 SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Schottky Diodes Diodes
Product Number AIDK12S65C5 AIDK12S65C5
Product Name CoolSiC™ Schottky Diodes Diodes
Life Cycle Stage active and preferred
Package D2PAK; PG-TO263-2
RoHS Compliant RoHS RoHS
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