The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristi
cs and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.
Summary of Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Junction Temperature range from -40°C to 175°C
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Potential Applications
Traction inverter
Booster / DCDC Converter
On board Charger / PFC
Designers who used this product also designed with
IAUC41N06S5L100 | Automotive MOSFET
BSL215C | Dual MOSFET
AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes
AIMCQ120R060M1T Silicon Carbide MOSFET Discretes
IPBE65R115CFD7A | Automotive MOSFET
BSS159N | N-Channel Depletion Mode MOSFET
TLE9471-3ES V33 | OPTIREG™ Lite SBC
AIGBE40N65F5 | Automotive IGBT discretes
BAS52-02V | Schottky Diodes
BSS84P | Small signal/small power MOSFET
IAUT300N08S5N011 | Automotive MOSFET
AIMCQ120R080M1T | Silicon Carbide MOSFET Discretes
SAK-TC365DP-64F300W AA | AURIX™ Family – TC36xDP
IAUC41N06S5L100 | Automotive MOSFET
BSL215C | Dual MOSFET
AIMDQ75R040M1H | Silicon Carbide MOSFET Discretes
AIMCQ120R060M1T Silicon Carbide MOSFET Discretes
IPBE65R115CFD7A | Automotive MOSFET
BSS159N | N-Channel Depletion Mode MOSFET
TLE9471-3ES V33 | OPTIREG™ Lite SBC
AIGBE40N65F5 | Automotive IGBT discretes
1 2 3 4
Applications
Electric vehicle (EV) drivetrain system
On-board charging (OBC) for electric vehicles
The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.
Summary of Features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Junction Temperature range from -40°C to 175°C
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
Potential Applications
- Traction inverter
- Booster / DCDC Converter
- On board Charger / PFC
Designers who used this product also designed with
- IAUC41N06S5L100 |
Automotive MOSFET
- BSL215C |
Dual MOSFET
- AIMDQ75R040M1H |
Silicon Carbide MOSFET Discretes
- AIMCQ120R060M1T
Silicon Carbide MOSFET Discretes
- IPBE65R115CFD7A |
Automotive MOSFET
- BSS159N |
N-Channel Depletion Mode MOSFET
- TLE9471-3ES V33 |
OPTIREG™ Lite SBC
- AIGBE40N65F5 |
Automotive IGBT discretes
- BAS52-02V |
Schottky Diodes
- BSS84P |
Small signal/small power MOSFET
- IAUT300N08S5N011 |
Automotive MOSFET
- AIMCQ120R080M1T |
Silicon Carbide MOSFET Discretes
- SAK-TC365DP-64F300W AA |
AURIX™ Family – TC36xDP
- IAUC41N06S5L100 |
Automotive MOSFET
- BSL215C |
Dual MOSFET
- AIMDQ75R040M1H |
Silicon Carbide MOSFET Discretes
- AIMCQ120R060M1T
Silicon Carbide MOSFET Discretes
- IPBE65R115CFD7A |
Automotive MOSFET
- BSS159N |
N-Channel Depletion Mode MOSFET
- TLE9471-3ES V33 |
OPTIREG™ Lite SBC
- AIGBE40N65F5 |
Automotive IGBT discretes
1
2
3
4
Applications
- Electric vehicle (EV) drivetrain system
- On-board charging (OBC) for electric vehicles