Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE 5962F2122201PXE

Description
Our 512 Mbit rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites. Summary of Features 512Mb density, QSPI at 125MHz 100k cycle write/infinite read endurance 10-year data retention @ 125ºC 1.8 V / 3.3 V I/O support 100-pin TQFP package DLAM QML qualified SMD 5962-21222 Radiation performance TID > 300krad SEU IMMUNE SEL > 80 LET MeV.cm2/mg [LET] SEFI 2.77e-5 err/dev.day Benefits Superior radiation performance 512Mbit density, 133MHz QSPI interface TQFP plastic package option Lower weight for SWaP-C benefits DLAM QML-P certification Highest reliability standard (QML-P)
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Description
Our 512 Mbit rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites. Summary of Features 512Mb density, QSPI at 125MHz 100k cycle write/infinite read endurance 10-year data retention @ 125ºC 1.8 V / 3.3 V I/O support 100-pin TQFP package DLAM QML qualified SMD 5962-21222 Radiation performance TID > 300krad SEU IMMUNE SEL > 80 LET MeV.cm2/mg [LET] SEFI 2.77e-5 err/dev.day Benefits Superior radiation performance 512Mbit density, 133MHz QSPI interface TQFP plastic package option Lower weight for SWaP-C benefits DLAM QML-P certification Highest reliability standard (QML-P)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE - 5962F2122201PXE - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE
5962F2122201PXE
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE 5962F2122201PXE
Our 512 Mbit rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites. Summary of Features 512Mb density, QSPI at 125MHz 100k cycle write/infinite read endurance 10-year data retention @ 125ºC 1.8 V / 3.3 V I/O support 100-pin TQFP package DLAM QML qualified SMD 5962-21222 Radiation performance TID > 300krad SEU IMMUNE SEL > 80 LET MeV.cm2/mg [LET] SEFI 2.77e-5 err/dev.day Benefits Superior radiation performance 512Mbit density, 133MHz QSPI interface TQFP plastic package option Lower weight for SWaP-C benefits DLAM QML-P certification Highest reliability standard (QML-P)

Our 512 Mbit rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites.


Summary of Features

  • 512Mb density, QSPI at 125MHz
  • 100k cycle write/infinite read endurance
  • 10-year data retention @ 125ºC
  • 1.8 V / 3.3 V I/O support
  • 100-pin TQFP package
  • DLAM QML qualified SMD 5962-21222
  • Radiation performance
    • TID > 300krad
    • SEU IMMUNE
    • SEL > 80 LET MeV.cm2/mg [LET]
    • SEFI 2.77e-5 err/dev.day

Benefits

  • Superior radiation performance
  • 512Mbit density, 133MHz QSPI interface
  • TQFP plastic package option
  • Lower weight for SWaP-C benefits
  • DLAM QML-P certification
  • Highest reliability standard (QML-P)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Memory Chips
Product Number 5962F2122201PXE
Product Name Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F2122201PXE
Operating Temperature -55 to 125 C (-67 to 257 F)
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