Indium Corporation Indium Metal High-Purity 6N5 Indium Bar (1kg)

Description
This purity is especially suited for the production of single crystal III-V compound semiconductors, such as indium Phosphide used as substrates for fabrication of integrated circuits or discrete devices such as laser diodes and photo detectors. Certification of 6N5 purity is by OES (optical emission spectroscopy) with GFAA (graphite furnace atomic absorption) being used for quantitative analysis of selected elements.

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This purity is especially suited for the production of single crystal III-V compound semiconductors, such as indium Phosphide used as substrates for fabrication of integrated circuits or discrete devices such as laser diodes and photo detectors. Certification of 6N5 purity is by OES (optical emission spectroscopy) with GFAA (graphite furnace atomic absorption) being used for quantitative analysis of selected elements.

This purity is especially suited for the production of single crystal III-V compound semiconductors, such as indium Phosphide used as substrates for fabrication of integrated circuits or discrete devices such as laser diodes and photo detectors. Certification of 6N5 purity is by OES (optical emission spectroscopy) with GFAA (graphite furnace atomic absorption) being used for quantitative analysis of selected elements.

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Technical Specifications

  Indium Corporation
Product Category Metal Shapes and Stock
Product Number High-Purity 6N5 Indium Bar (1kg)
Product Name Indium Metal
Type LowMelting; Indium
Shape / Form Semi-finished, Mill Stock or Near Net Shapes; Bar Stock
Applications Sealing in Cryogenic Applications, Soldering/Fusing
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