Hunan Jinxin Technology Co., Ltd. Transistors ES3139KE

Description
20V 650mA 900mW 580mΩ@4.5V,0.5A 620mV@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS
Request a Quote
Description
20V 650mA 900mW 580mΩ@4.5V,0.5A 620mV@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - ES3139KE - ODG (Origin Data Global)
Shenzhen, China
Transistors
ES3139KE
Transistors ES3139KE
20V 650mA 900mW 580mΩ@4.5V,0.5A 620mV@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS

20V 650mA 900mW 580mΩ@4.5V,0.5A 620mV@250uA 1 Piece P-Channel DFN1006-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ES3139KE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
45 V, 1 A NPN medium power transistors - BC54-10PASX - Nexperia B.V.
Specs
Package Type SOT1061D
View Details
4 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details