Huayi Microelectronics Co., Ltd. Transistors HYG060N08NS1D

Description
80V 80A 5.7mΩ@10V,40A 75W 3V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
  • Transistors - HYG060N08NS1D - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
80V 80A 5.7mΩ@10V,40A 75W 3V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HYG060N08NS1D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG060N08NS1D
Transistors HYG060N08NS1D
80V 80A 5.7mΩ@10V,40A 75W 3V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

80V 80A 5.7mΩ@10V,40A 75W 3V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG060N08NS1D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

60 V, 1 A PNP medium power transistors - BC69PAS-QX - Nexperia B.V.
Nexperia B.V.
60 V, 1 A PNP medium power transistors
BC69PAS-QX
Specs
Package Type SOT1061D SOT1061D
View Details
IGBT Module - 19567903 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR10NF120
Specs
Transistor Type IGBT
View Details
MOSFETs - 1694151 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1694151
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT223; Sot-223
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N6787 - Shenzhen Shengyu Electronics Technology Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N6787
Specs
Transistor Type MOSFET
Package Type TO-205AF Metal Can
View Details