Huayi Microelectronics Co., Ltd. Transistors HYG053N10NS1C2

Description
100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 1 N-Channel PDFN-8(5x5.8) MOSFETs ROHS
  • Transistors - HYG053N10NS1C2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 1 N-Channel PDFN-8(5x5.8) MOSFETs ROHS

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Transistors - HYG053N10NS1C2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HYG053N10NS1C2
Transistors HYG053N10NS1C2
100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 1 N-Channel PDFN-8(5x5.8) MOSFETs ROHS

100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 1 N-Channel PDFN-8(5x5.8) MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HYG053N10NS1C2
Product Name Transistors
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