Huayi Microelectronics Co., Ltd. Transistors HY3810B

Description

100V 180A 6.5mΩ@10V,90A 346W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

ODG (Origin Data Global)

Request a Quote

Email Supplier

Description

100V 180A 6.5mΩ@10V,90A 346W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Request a Quote

Email Supplier

Suppliers

Company

Product

Description

Supplier Links

ODG (Origin Data Global)

Shenzhen, China

Transistors
HY3810B

Transistors HY3810B

100V 180A 6.5mΩ@10V,90A 346W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

	ODG (Origin Data Global)
Product Category	Transistors
Product Number	HY3810B
Product Name	Transistors

Unlock Full Specs

to access all available technical data

Similar Products

Infineon Technologies AG

Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H

AIMDQ75R016M2H

Specs

Transistor Type MOSFET

Polarity N-Channel; N

Transistor Technology / Material Silicon carbide

View Details

Qorvo

DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor

TGF2929-FL

Specs

Transistor Technology / Material GaN

Package Type NI-360

Transistor Grade / Operating Range Military

View Details

3 suppliers

Texas Instruments

CSD83325L CSD83325L, Dual N-Channel NexFET? Power MOSFETs

CSD83325LT

Specs

Transistor Type Power-MOSFET

Polarity N-Channel

Package Type LGA

View Details

6 suppliers

Advanced Linear Devices, Inc.

QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY

ALD910026SALI

Specs

Transistor Type MOSFET

Polarity N-Channel

Package Type SOIC8

View Details

2 suppliers