Huayi Microelectronics Co., Ltd. Transistors HY1103S

Description
30V 11A 11mΩ@10V,6A 2.5W 3V@250uA 1 N-Channel SOP-8 MOSFETs ROHS
  • Transistors - HY1103S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 11A 11mΩ@10V,6A 2.5W 3V@250uA 1 N-Channel SOP-8 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY1103S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY1103S
Transistors HY1103S
30V 11A 11mΩ@10V,6A 2.5W 3V@250uA 1 N-Channel SOP-8 MOSFETs ROHS

30V 11A 11mΩ@10V,6A 2.5W 3V@250uA 1 N-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY1103S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

500A Igbt Mod Left-Side & Right-Side - SK-H1-QOUT-D500 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
500A Igbt Mod Left-Side & Right-Side
SK-H1-QOUT-D500
Specs
Transistor Type IGBT
View Details
Igbt, 1.2Kv, 75A, Module; Continuous Collector Current Fuji Electric - 56P5525 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 1.2Kv, 75A, Module; Continuous Collector Current Fuji Electric
7MBR50SB-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
- LM5100AMX/NOPB - Rochester Electronics
Texas Instruments
LM5100AMX/NOPB
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
- 2EDN7434FXTMA1 - Rochester Electronics
Infineon Technologies AG
2EDN7434FXTMA1
Specs
Transistor Type MOSFET
Package Type SO-8; PG-DSO-8
View Details