Huashuo Semiconductor Transistors HSBB6115

Description
60V 26A 25mΩ@10V,10A 5.2W 2.5V@250uA 1 Piece P-Channel DFN-8(3x3) MOSFETs ROHS
  • Transistors - HSBB6115 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 26A 25mΩ@10V,10A 5.2W 2.5V@250uA 1 Piece P-Channel DFN-8(3x3) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBB6115 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBB6115
Transistors HSBB6115
60V 26A 25mΩ@10V,10A 5.2W 2.5V@250uA 1 Piece P-Channel DFN-8(3x3) MOSFETs ROHS

60V 26A 25mΩ@10V,10A 5.2W 2.5V@250uA 1 Piece P-Channel DFN-8(3x3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBB6115
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

General Purpose Transistor - 2N3904 - Micross Components, Inc.
Micross Components, Inc.
General Purpose Transistor
2N3904
View Details
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor - TGF2965-SM - Qorvo
Qorvo
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
TGF2965-SM
Specs
Transistor Technology / Material GaN
Package Type QFN
View Details
4 suppliers
500A Igbt Mod Left-Side & Right-Side - SK-H1-QOUT-D500 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
500A Igbt Mod Left-Side & Right-Side
SK-H1-QOUT-D500
Specs
Transistor Type IGBT
View Details
IGBT Module - 6681167 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2MBI400L-060
Specs
Transistor Type IGBT
View Details