Huashuo Semiconductor Transistors HSBA50N06

Description
60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel PRPAK5x6 MOSFETs ROHS
  • Transistors - HSBA50N06 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel PRPAK5x6 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBA50N06 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBA50N06
Transistors HSBA50N06
60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel PRPAK5x6 MOSFETs ROHS

60V 50A 62W 12mΩ@10V,30A 2.5V@250uA 1 N-Channel PRPAK5x6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBA50N06
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor - QPD1025L - Qorvo
Qorvo
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
QPD1025L
Specs
Transistor Technology / Material 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Package Type NI-1230 (Eared)
Transistor Grade / Operating Range Military
View Details
2 suppliers
IGBT - 192352315 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI200TE-060
Specs
Transistor Type IGBT
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-40W-QF - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-40W-QF
Specs
Transistor Type BJT
Package Type SC-70
View Details
2 suppliers
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110908APAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY
ALD110908APAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
3 suppliers