GSI Technology Integrated Circuits (ICs) - Memory - Memory GS832136AGB-333I

Description
1M X 36 (36 MEG) SYNCH BURST REV
Datasheet
Description
1M X 36 (36 MEG) SYNCH BURST REV
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
GS832136AGB-333I
Integrated Circuits (ICs) - Memory - Memory GS832136AGB-333I
1M X 36 (36 MEG) SYNCH BURST REV

1M X 36 (36 MEG) SYNCH BURST REV

Supplier's Site
Memory - GS832136AGB-333I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
1M X 36 (36 MEG) SYNCH BURST REV

1M X 36 (36 MEG) SYNCH BURST REV

Supplier's Site Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number GS832136AGB-333I GS832136AGB-333I GS832136AGB-333I
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 8611200826 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Controllers - BQ2204ASN-N - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
Flash Memory - 1882560 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details