GSI Technology Memory GS832136AGB-333I

Description
1M X 36 (36 MEG) SYNCH BURST REV
Datasheet
Description
1M X 36 (36 MEG) SYNCH BURST REV
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1M X 36 (36 MEG) SYNCH BURST REV

1M X 36 (36 MEG) SYNCH BURST REV

Supplier's Site Datasheet
Memory - GS832136AGB-333I - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
GS832136AGB-333I
Integrated Circuits (ICs) - Memory - Memory GS832136AGB-333I
1M X 36 (36 MEG) SYNCH BURST REV

1M X 36 (36 MEG) SYNCH BURST REV

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number GS832136AGB-333I GS832136AGB-333I GS832136AGB-333I
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8670302FA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 35 ns
Density 0 kbits
View Details
SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers
Memory - AS5SP256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details