Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT2K6P15T

The GT2K6P15T is a P-channel enhancement mode Power MOSFET designed for power switching and DC/DC converter applications. It is packaged in a TO-220 case and rated for a drain-source voltage of -150 V, a continuous drain current of -11 A at 25°C, and a power dissipation of 58 W. The device has a maximum on-resistance of 260 mΩ at VₒS = -10 V and is 100% avalanche tested with a single pulse avalanche energy of 56 mJ. It operates over a junction and storage temperature range of -55°C to 150°C, features a thermal resistance junction-to-case of 2.2 °C/W, and is RoHS compliant.