Goford Semiconductor Co., Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M GT250P10M

Description
N/P Channel: P-CH Voltage(VDS): 100V Current(ID): 56A RDS(on): RD(max)<27mΩ@10V VTH: VTH2.0V~2.8V~4 Package: TO-263
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M - Win Source Electronics
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Description
N/P Channel: P-CH Voltage(VDS): 100V Current(ID): 56A RDS(on): RD(max)<27mΩ@10V VTH: VTH2.0V~2.8V~4 Package: TO-263
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M
N/P Channel: P-CH Voltage(VDS): 100V Current(ID): 56A RDS(on): RD(max)<27mΩ@10V VTH: VTH2.0V~2.8V~4 Package: TO-263

N/P Channel: P-CH
Voltage(VDS): 100V
Current(ID): 56A
RDS(on): RD(max)<27mΩ@10V
VTH: VTH2.0V~2.8V~4
Package: TO-263

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - GT250P10M
Package Type TO-263; SOT3
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